H10D 84/87
Of pn-junction gate fets
Official title: of PN-junction gate FETs
H10D84/87 (Of pn-junction gate fets) appears on 267 US grants and 270 published applications in this corpus.
Search patents in H10D- Granted patents
- 267
- Published applications
- 270
- Assignees
- 124
- Inventors
- 392
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 4 | 0 |
| 1978 | 3 | 0 |
| 1979 | 2 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 5 |
| 2003 | 6 | 3 |
| 2004 | 4 | 2 |
| 2005 | 4 | 9 |
| 2006 | 5 | 5 |
| 2007 | 7 | 10 |
| 2008 | 3 | 24 |
| 2009 | 12 | 13 |
| 2010 | 20 | 12 |
| 2011 | 10 | 10 |
| 2012 | 6 | 12 |
| 2013 | 12 | 16 |
| 2014 | 15 | 17 |
| 2015 | 19 | 14 |
| 2016 | 12 | 12 |
| 2017 | 13 | 13 |
| 2018 | 19 | 16 |
| 2019 | 14 | 19 |
| 2020 | 16 | 12 |
| 2021 | 12 | 10 |
| 2022 | 11 | 9 |
| 2023 | 8 | 12 |
| 2024 | 6 | 3 |
| 2025 | 3 | 5 |
| 2026 | 2 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor devices having on-chip gate resistors14 Oct 2025US 12,446,300 B2Wolfspeed, Inc.
- Apparatus and circuits with dual threshold voltage transistors and methods of fabricating the same18 Feb 2025US 12,230,636 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Apparatus including fet and integrated sbd located outside of fet unit cell10 Sep 2026US 2026/0271358 A1Microchip Technology Incorporated
- Vertical fin-based field effect transistor (finfet) with varying conductivity regions25 Jun 2026US 2026/0182011 A1Semiconductor Components Industries, LLC
- Integrated device comprising a high mobility transistor and a mosfet transistor, and manufacturing process thereof4 Jun 2026US 2026/0156925 A1STMicroelectronics International N. V.
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Most cited
By later US patents
- 3D semiconductor device and structure79US 8,803,206 B1Monolithic 3D Inc. · 2014
- Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices75US 8,569,842 B2Infineon Technologies Austria AG · 2013
- Hybrid power MOSFET73US 6,633,195 B2Siemens Aktiengesellschaft · 2003
- Vertical replacement-gate junction field-effect transistor69US 7,033,877 B2Agere Systems Inc. · 2006
- JFET controlled schottky barrier diode51US 7,064,407 B1Micrel, Inc. · 2006