Nitride semiconductor device and method for manufacturing the same
AssigneeNuvoton Technology Corporation Japan
InventorYusuke KANDA
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Abstract
A nitride semiconductor device is a nitride semiconductor device including an active element and a passive element, and includes: a nitride semiconductor layer divided into an active region and an inactive region in a plan view; and a metal layer in contact with the nitride semiconductor layer in the inactive region. The active element is provided in the active region, and the passive element is provided in the inactive region. The metal layer includes a coherent state or a metamorphic state relative to the nitride semiconductor layer.
Claims20
A nitride semiconductor device including an active element and a passive element, the nitride semiconductor device comprising:
- a nitride semiconductor layer that is divided into an active region and an inactive region in a plan view;
- and
- a metal layer that is in contact with the nitride semiconductor layer in the inactive region,
- wherein the active element is provided in the active region,
- the passive element is provided in the inactive region, and
- the metal layer includes a coherent state or a metamorphic state relative to the nitride semiconductor layer.
A method for manufacturing a nitride semiconductor device including an active element and a passive element, the method comprising:
- forming a nitride semiconductor layer that is divided into an active region and an inactive region in a plan view;
- and
- forming a metal layer that is in contact with the nitride semiconductor layer in the inactive region,
- wherein the active element is provided in the active region,
- the passive element is provided in the inactive region, and
- the metal layer includes a coherent state or a metamorphic state relative to the nitride semiconductor layer.
Dependencies are inferred from the claim text.