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US 12,446,300 B2Granted
Semiconductor devices having on-chip gate resistors
AssigneeWolfspeed, Inc.
InventorsRahul R. Potera, Prasanna Obala Bhuvanesh, Shadi Sabri, Roberto M. Schupbach, Jianwen Shao
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Abstract
Power semiconductor devices comprise a gate pad, a gate bus, and a gate resistor that is electrically interposed between the gate pad and the gate bus and comprises a wide band-gap semiconductor material region.
Claims19
A semiconductor device comprising:
- a gate pad;
- a gate bus;
- and
- a gate resistor electrically interposed between the gate pad and the gate bus and comprising a wide band-gap semiconductor material region that has an insulating layer formed directly on an upper surface of the wide band-gap semiconductor material region.
1 more element
A semiconductor device comprising:
- a metal gate pad;
- a metal gate bus;
- and
- a gate resistor comprising a wide band-gap semiconductor material region that has a first conductivity type, the gate resistor electrically connecting the gate pad to the gate bus, where the gate resistor is a first portion of a semiconductor layer structure, the semiconductor layer structure further comprising a second portion that has a second conductivity type,
- wherein the wide band-gap semiconductor material region further comprises a first portion having the first conductivity type that is in between the metal gate pad and the second portion of the semiconductor layer structure and a second portion having the first conductivity type that is in between the metal gate bus and the second portion of the semiconductor layer structure.
2 more elements
A semiconductor device comprising:
- a gate pad;
- a gate bus;
- and
- a gate resistor electrically interposed between the gate pad and the gate bus and comprising a wide band-gap semiconductor material region,
- wherein the wide band-gap semiconductor material region is a portion of a semiconductor layer structure that comprises an active area comprising a plurality of junction field effect transistors (JFETs), and
- wherein the semiconductor device is cascoded with a metal-oxide-semiconductor field-effect transistor (MOSFET) to form a circuit breaker.
3 more elements
A semiconductor device comprising:
- a semiconductor layer structure comprising an active area that comprises a plurality of junction field effect transistors (JFETs);
- a first silicide region and a second silicide region on an upper surface of the semiconductor layer structure;
- a metal gate pad on the first silicide region;
- a metal gate bus on the second silicide region;
- and electrically connected to the plurality of JFETs;
- wherein the semiconductor layer structure further comprises a gate resistor that is electrically interposed between the metal gate pad and the metal gate bus, wherein an upper surface of the gate resistor is free of silicide.
3 more elements
Dependencies are inferred from the claim text.