Hybrid power MOSFET
AssigneeSiemens Aktiengesellschaft
InventorsEric Baudelot, Manfred Bruckmann, Heinz Mitlehner, Dietrich Stephani, Benno Weis
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Abstract
A hybrid power MOSFET, comprising a MOSFET and a junction FET, the MOSFET and the junction FET being electrically connected in series is disclosed. In accordance with the present invention, the hybrid power MOSFET is provided with a device for reducing the change in the gate voltage of the junction FET. Thus, a hybrid power MOSFET is obtained in which high over-voltages no longer arise and whose EMC response is much improved.
Claims16
A hybrid power MOSFET comprising of a MOSFET and a junction FET, wherein the MOSFET and the FET are electrically connected in series such that a source connection of the FET is connected in an electrically conductive manner to a drain connection of the MOSFET, and a gate connection of the FET is connected in like manner to a source connection of the MOSFET, and further wherein a device for reducing variation of the FET's gate voltage is provided and which is connected at an input having a control voltage.
A hybrid power MOSFET comprising of a MOSFET and a junction FET, wherein the MOSFET and the FET are electrically connected in series such that a source connection of the FET is connected in an electrically conductive manner to a drain connection of the MOSFET, and a gate connection of the FET is connected in like manner to a source connection of the MOSFET, and further wherein a device for reducing variation of the FET's gate voltage is provided and which is connected to a gate connection of the FET and to a source connection of the MOSFET.
A hybrid power MOSFET comprising of a MOSFET and a junction FET wherein the MOSFET and the FET are electrically connected in series such that a source connection of the FET is connected in an electrically conductive manner to a drain connection of the MOSFET, and a gate connection of the FET is connected in like manner to a source connection of the MOSFET, and further wherein a device for reducing variation of the FET's gate voltage is provided and which is connected to a source connection of the FET and to a drain connection of the MOSFET.
Dependencies are inferred from the claim text.