H10D 84/00
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting
Official title: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
H10D84/00 (Integrated devices formed in or on semiconductor substrates that comprise only semiconducting) appears on 57,527 US grants and 60,984 published applications in this corpus.
Search patents in H10D- Granted patents
- 57,527
- Published applications
- 60,984
- Assignees
- 3,405
- Inventors
- 45,636
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 158 | 0 |
| 1977 | 179 | 0 |
| 1978 | 146 | 0 |
| 1979 | 113 | 0 |
| 1980 | 136 | 0 |
| 1981 | 146 | 0 |
| 1982 | 105 | 0 |
| 1983 | 109 | 0 |
| 1984 | 133 | 0 |
| 1985 | 146 | 0 |
| 1986 | 175 | 0 |
| 1987 | 199 | 0 |
| 1988 | 213 | 0 |
| 1989 | 263 | 0 |
| 1990 | 271 | 0 |
| 1991 | 323 | 0 |
| 1992 | 301 | 0 |
| 1993 | 275 | 0 |
| 1994 | 357 | 0 |
| 1995 | 392 | 0 |
| 1996 | 390 | 0 |
| 1997 | 394 | 0 |
| 1998 | 529 | 0 |
| 1999 | 636 | 0 |
| 2000 | 794 | 0 |
| 2001 | 856 | 350 |
| 2002 | 946 | 1077 |
| 2003 | 1010 | 1111 |
| 2004 | 1020 | 1271 |
| 2005 | 961 | 1545 |
| 2006 | 1060 | 1651 |
| 2007 | 987 | 1744 |
| 2008 | 1042 | 1845 |
| 2009 | 1136 | 1630 |
| 2010 | 1544 | 1582 |
| 2011 | 1528 | 1563 |
| 2012 | 1391 | 1710 |
| 2013 | 1822 | 2056 |
| 2014 | 2120 | 2316 |
| 2015 | 2469 | 2890 |
| 2016 | 3000 | 3104 |
| 2017 | 3235 | 3076 |
| 2018 | 3053 | 3059 |
| 2019 | 3269 | 3225 |
| 2020 | 3140 | 3644 |
| 2021 | 2726 | 3134 |
| 2022 | 2546 | 3482 |
| 2023 | 2526 | 3716 |
| 2024 | 2731 | 3871 |
| 2025 | 2785 | 3782 |
| 2026 | 1741 | 2550 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 84/01Manufacture or treatment39,487
- H10D 84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting28,522
- H10D 84/101Integrated devices comprising main components and built-in components3,211
- H10D 84/90Masterslice integrated circuits3,004
- H10D 84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting2,943
- H10D 84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting2,718
- H10D 84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting2,143
- H10D 84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting146
Recent patents
- Semiconductor device and method for driving semiconductor device6 Oct 2026US 12,755,697 B2Semiconductor Energy Laboratory Co.Ltd.
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Integrated circuit6 Oct 2026US 12,756,182 B2Via Labs, Inc.
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Semiconductor switch with degradation detection8 Oct 2026US 2026/0309774 A1Infineon Technologies AG
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312572 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312573 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- FINFETs with wrap-around silicide and method forming the same1,436US 9,608,116 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014