H10D 84/101
Integrated devices comprising main components and built-in components
Official title: {Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode}
H10D84/101 (Integrated devices comprising main components and built-in components) appears on 3,211 US grants and 3,415 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,211
- Published applications
- 3,415
- Assignees
- 558
- Inventors
- 3,674
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 7 | 0 |
| 1978 | 7 | 0 |
| 1979 | 6 | 0 |
| 1980 | 8 | 0 |
| 1981 | 10 | 0 |
| 1982 | 6 | 0 |
| 1983 | 6 | 0 |
| 1984 | 9 | 0 |
| 1985 | 11 | 0 |
| 1986 | 15 | 0 |
| 1987 | 9 | 0 |
| 1988 | 19 | 0 |
| 1989 | 28 | 0 |
| 1990 | 29 | 0 |
| 1991 | 22 | 0 |
| 1992 | 22 | 0 |
| 1993 | 14 | 0 |
| 1994 | 25 | 0 |
| 1995 | 29 | 0 |
| 1996 | 23 | 0 |
| 1997 | 32 | 0 |
| 1998 | 30 | 0 |
| 1999 | 30 | 0 |
| 2000 | 28 | 0 |
| 2001 | 24 | 13 |
| 2002 | 28 | 40 |
| 2003 | 34 | 26 |
| 2004 | 36 | 43 |
| 2005 | 32 | 50 |
| 2006 | 32 | 73 |
| 2007 | 35 | 61 |
| 2008 | 34 | 80 |
| 2009 | 51 | 87 |
| 2010 | 87 | 119 |
| 2011 | 105 | 108 |
| 2012 | 109 | 149 |
| 2013 | 128 | 126 |
| 2014 | 156 | 180 |
| 2015 | 170 | 178 |
| 2016 | 193 | 186 |
| 2017 | 174 | 167 |
| 2018 | 156 | 188 |
| 2019 | 189 | 190 |
| 2020 | 183 | 219 |
| 2021 | 170 | 176 |
| 2022 | 175 | 189 |
| 2023 | 128 | 172 |
| 2024 | 137 | 173 |
| 2025 | 127 | 218 |
| 2026 | 87 | 204 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Semiconductor device15 Sep 2026US 12,740,157 B2Nuvoton Technology Corporation Japan
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Semiconductor device8 Sep 2026US 12,733,246 B2Kabushiki Kaisha Toshiba
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Mosfet device8 Oct 2026US 2026/0314037 A1Vishay-Siliconix
- Semiconductor device having integrated planar mosfets and an integrated trench schottky barrier diode8 Oct 2026US 2026/0314038 A1Microchip Technology Incorporated
- Method for discharging static electricity8 Oct 2026US 2026/0314080 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device1 Oct 2026US 2026/0304828 A1Rohm Co., Ltd.
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Method for depositing a metal chalcogenide on a substrate by cyclical deposition421US 10,319,588 B2ASM IP Holding B. V. · 2019
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002