H10D 84/131
Thyristors having built-in components
Official title: {Thyristors having built-in components}
H10D84/131 (Thyristors having built-in components) appears on 409 US grants and 295 published applications in this corpus.
Search patents in H10D- Granted patents
- 409
- Published applications
- 295
- Assignees
- 167
- Inventors
- 572
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 5 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 5 | 0 |
| 1981 | 6 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 4 | 0 |
| 1985 | 5 | 0 |
| 1986 | 7 | 0 |
| 1987 | 0 | 0 |
| 1988 | 9 | 0 |
| 1989 | 7 | 0 |
| 1990 | 5 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 9 | 0 |
| 1996 | 3 | 0 |
| 1997 | 12 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 5 | 1 |
| 2002 | 4 | 5 |
| 2003 | 4 | 3 |
| 2004 | 3 | 7 |
| 2005 | 6 | 4 |
| 2006 | 7 | 6 |
| 2007 | 6 | 4 |
| 2008 | 4 | 4 |
| 2009 | 4 | 3 |
| 2010 | 3 | 5 |
| 2011 | 5 | 4 |
| 2012 | 6 | 5 |
| 2013 | 5 | 3 |
| 2014 | 7 | 12 |
| 2015 | 8 | 10 |
| 2016 | 24 | 36 |
| 2017 | 29 | 23 |
| 2018 | 22 | 32 |
| 2019 | 30 | 18 |
| 2020 | 15 | 18 |
| 2021 | 15 | 27 |
| 2022 | 25 | 11 |
| 2023 | 14 | 22 |
| 2024 | 18 | 17 |
| 2025 | 13 | 11 |
| 2026 | 7 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device18 Aug 2026US 12,713,707 B2Nexperia B. V.
- Method for discharging static electricity11 Aug 2026US 12,707,725 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gated protection device structures for an electrostatic discharge protection circuit16 Jun 2026US 12,660,221 B2GLOBALFOUNDRIES U. S. Inc.
- Method for discharging static electricity8 Oct 2026US 2026/0314080 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including memory cell including thyristor and method of manufacturing the same13 Aug 2026US 2026/0239632 A1SK hynix Inc.
- Diode triggered silicon controlled rectifiers19 Mar 2026US 2026/0082678 A1GLOBALFOUNDRIES U. S. Inc.
- Esd solution for 3dic die-to-die interface26 Feb 2026US 2026/0059866 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doped polar layers and semiconductor device incorporating same30 Oct 2025US 2025/0338552 A1Kepler Computing Inc.
Most cited
By later US patents
- Method for depositing a metal chalcogenide on a substrate by cyclical deposition421US 10,319,588 B2ASM IP Holding B. V. · 2019
- Integrated SCR-LDMOS power device106US 6,137,140 ATexas Instruments Incorporated · 2000
- Semiconductor switching device78US 5,285,100 ATexas Instruments Incorporated · 1994
- PNPN Semiconductor switches77US 4,244,000 ANippon Telegraph & Telephone Public Corporation · 1981
- Doped polar layers and semiconductor device incorporating same64US 11,164,976 B2Kepler Computing Inc. · 2021