Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device

An insulated-gate bipolar transistor device comprising:

• a first region doped with a first type of charge carriers;
• a second region doped with a second type of charge carriers different from the first type of charge carriers;
• a third region doped with the first type of charge carriers;
• a fourth region doped with the second type of charge carriers;
• an emitter terminal electrically connected with the first region and a collector terminal electrically connected with the third region and the fourth region;
• a gate structure disposed on the third region with one end adjacent to the second region and with another end adjacent the fourth region;
• and
• a diode structure having a first diode structure terminal electrically connected with the collector terminal and a second diode structure terminal electrically connected with a gate terminal of the gate structure;
• wherein the diode structure is a paired antiparallel diode structure with a total capacitance no greater than 200 femto-Farads.