H10D 84/138
The built-in components being fets
Official title: {the built-in components being FETs}
H10D84/138 (The built-in components being fets) appears on 92 US grants and 59 published applications in this corpus.
Search patents in H10D- Granted patents
- 92
- Published applications
- 59
- Assignees
- 48
- Inventors
- 137
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 5 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 2 |
| 2005 | 2 | 1 |
| 2006 | 3 | 2 |
| 2007 | 1 | 0 |
| 2008 | 3 | 2 |
| 2009 | 0 | 1 |
| 2010 | 1 | 2 |
| 2011 | 3 | 1 |
| 2012 | 2 | 1 |
| 2013 | 3 | 1 |
| 2014 | 1 | 3 |
| 2015 | 0 | 1 |
| 2016 | 5 | 8 |
| 2017 | 6 | 3 |
| 2018 | 5 | 9 |
| 2019 | 7 | 6 |
| 2020 | 3 | 0 |
| 2021 | 3 | 5 |
| 2022 | 2 | 2 |
| 2023 | 3 | 3 |
| 2024 | 0 | 3 |
| 2025 | 4 | 2 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gated protection device structures for an electrostatic discharge protection circuit16 Jun 2026US 12,660,221 B2GLOBALFOUNDRIES U. S. Inc.
- Low capacitance poly-bounded silicon controlled rectifiers10 Feb 2026US 12,550,453 B2Analog Devices, Inc.
- Low voltage triggering silicon controlled rectifier14 Oct 2025US 12,446,297 B2Shanghai Huali Integrated Circuit Corporation
- Memory device using semiconductor element13 May 2025US 12,302,548 B2Unisantis Electronics Singapore Pte. Ltd.
- FinFET thyristors with embedded transistor control for protecting high-speed communication systems25 Mar 2025US 12,261,593 B2Analog Devices, Inc.
- Finfet multi-diode thyristor switch for protecting high data rate communication system interfaces19 Jun 2025US 2025/0202471 A1Analog Devices, Inc.
- Semiconductor devices including semiconductor pattern3 Apr 2025US 2025/0113590 A1Samsung Electronics Co., Ltd.
- Low capacitance poly-bounded silicon controlled rectifiers31 Oct 2024US 2024/0363618 A1Analog Devices, Inc.
- Low voltage triggering silicon controlled rectifier4 Apr 2024US 2024/0113209 A1Shanghai Huali Integrated Circuit Corporation
- Gated protection device structures for an electrostatic discharge protection circuit7 Mar 2024US 2024/0079482 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Method for depositing a metal chalcogenide on a substrate by cyclical deposition421US 10,319,588 B2ASM IP Holding B. V. · 2019
- Integrated SCR-LDMOS power device106US 6,137,140 ATexas Instruments Incorporated · 2000
- PNPN Semiconductor switches77US 4,244,000 ANippon Telegraph & Telephone Public Corporation · 1981
- Small cell low contact resistance rugged power field effect devices and method of fabrication61US 5,119,153 AGeneral Electric Company · 1992
- Bond pad with integrated transient over-voltage protection58US 8,222,698 B2Analog Devices, Inc. · 2012