Back to results
US 8,222,698 B2Granted
Bond pad with integrated transient over-voltage protection
AssigneeAnalog Devices, Inc.
InventorsJavier Salcedo, Alan Righter
Life of this patent
Estimating the term…
Abstract
In various embodiments, the invention relates to bond pad structures including planar transistor structures operable as over-voltage clamps.
Claims28
A bond pad structure comprising:
- a substrate comprising a plurality of planar over-voltage clamp devices including high-side regions and low-side regions, each device being elongated along a width thereof in a first direction;
- disposed above the substrate, a first, patterned metal layer comprising (i) at least one conductive island elongated in the first direction and aligned with and electrically connected to the high-side regions and (ii) a conductive area surrounding the at least one conductive island and electrically connected with the low-side regions;
- and
- a first bus oriented substantially perpendicular to the first direction and comprising at least a portion of the conductive area surrounding the at least one conductive islands,
- wherein the planar over-voltage clamp devices are configured to shunt currents, under over-voltage conditions, from the at least one conductive island to the first bus.
2 more elements
A bond pad structure comprising:
- (a) a substrate having a plurality of planar MOS structures operative as voltage clamps integrated therein, each voltage clamp comprising
- (i) a gate structure;
- (ii) on a first side of the gate structure, a first highly doped region of a first conductivity type;
- and
- (iii) on a second side of the gate structure, a second highly doped region of the first conductivity type, wherein the second highly doped region is separated from the gate structure by (A) a third highly doped region of a second conductivity type, and (B) at least one of spacing or ballasting;
- and
- (b) disposed above the substrate, a first metal layer comprising at least one conductive island electrically connected to the second highly doped regions and a conductive area surrounding the at least one conductive island and electrically connected to the first highly doped regions.
4 more elements
Dependencies are inferred from the claim text.