H10D 84/133
The built-in components being capacitors or resistors
Official title: {the built-in components being capacitors or resistors}
H10D84/133 (The built-in components being capacitors or resistors) appears on 109 US grants and 86 published applications in this corpus.
Search patents in H10D- Granted patents
- 109
- Published applications
- 86
- Assignees
- 62
- Inventors
- 166
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 3 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 3 |
| 2005 | 2 | 1 |
| 2006 | 1 | 1 |
| 2007 | 3 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 1 |
| 2014 | 1 | 1 |
| 2015 | 2 | 4 |
| 2016 | 4 | 5 |
| 2017 | 6 | 5 |
| 2018 | 8 | 7 |
| 2019 | 5 | 6 |
| 2020 | 5 | 10 |
| 2021 | 5 | 14 |
| 2022 | 17 | 3 |
| 2023 | 6 | 13 |
| 2024 | 11 | 7 |
| 2025 | 3 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Thyristor based on charge plasma and cross-point memory array including the same6 Oct 2026US 12,757,476 B2Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Doped polar layers and semiconductor device incorporating same16 Dec 2025US 12,501,656 B2Kepler Computing Inc.
- Doped polar layers and semiconductor device incorporating same22 Jul 2025US 12,369,351 B2Kepler Computing Inc.
- Doped polar layers and semiconductor device incorporating same6 May 2025US 12,294,029 B2Kepler Computing Inc.
- Silicon controlled rectifier31 Dec 2024US 12,183,730 B2Infineon Technologies AG
- Doped polar layers and semiconductor device incorporating same30 Oct 2025US 2025/0338552 A1Kepler Computing Inc.
- Doped polar layers and semiconductor device incorporating same19 Dec 2024US 2024/0421229 A1Kepler Computing Inc.
- Thyristor based on charge plasma and cross-point memory array including the same26 Sep 2024US 2024/0322023 A1Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Concurrent compensation in a memory system15 Aug 2024US 2024/0274720 A1Micron Technology, Inc.
- Device for electrostatic discharge protection using silicon controlled rectifier4 Jul 2024US 2024/0222357 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Semiconductor switching device78US 5,285,100 ATexas Instruments Incorporated · 1994
- PNPN Semiconductor switches77US 4,244,000 ANippon Telegraph & Telephone Public Corporation · 1981
- Doped polar layers and semiconductor device incorporating same64US 11,164,976 B2Kepler Computing Inc. · 2021
- Semiconductor device22US 4,302,763 ASony Corporation · 1981
- Electrostatic discharge protection apparatus19US 6,696,708 B2Winbond Electronics Corp. · 2004