Doped polar layers and semiconductor device incorporating same

A semiconductor device, comprising:

• a capacitor stack comprising:
• a crystalline polar layer comprising a base polar material substitutionally doped with a dopant, wherein the base polar material comprises a metal oxide having one of a perovskite crystal structure or a hexagonal crystal structure, wherein the metal oxide comprises one or more metal elements, and wherein the dopant comprises a metal element of one of 4d series, 5d series, 4f series or 5f series that is different from the one or more metal elements of the metal oxide and is present at a concentration such that a ferroelectric switching voltage of the capacitor stack is lower than about 600 mV;
• first and second crystalline conductive or semiconductive oxide electrodes formed on opposing sides of the crystalline polar layer;
• and
• a further electrode formed on one or both of the first and second crystalline conductive or semiconductive oxide electrodes on a side facing away from the crystalline polar layer and comprising a conductive binary metallic oxide.

A semiconductor device, comprising:

• a capacitor stack comprising:
• a crystalline polar layer comprising a base polar material substitutionally doped with a dopant, wherein the base polar material comprises a metal oxide having one of a perovskite crystal structure or a hexagonal crystal structure and wherein the metal oxide comprises one or more metal elements;
• wherein the dopant is present at a concentration such that a remnant polarization of the polar layer is less than that of the base polar material without the dopant by more than about 5 μC/cm2;
• first and second crystalline conductive or semiconductive oxide electrodes formed on opposing sides of the crystalline polar layer;
• and
• a further electrode formed on one or both of the first and second crystalline conductive or semiconductive oxide electrodes on a side facing away from the crystalline polar layer and comprising a conductive binary metallic oxide, wherein the at least one of the first and second crystalline conductive or semiconductive oxide electrodes is positioned between the further electrode and the crystalline polar layer.