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AssigneeKepler Computing Inc.
InventorsRamesh Ramamoorthy, Sasikanth Manipatruni, Gaurav Thareja
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The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a capacitor comprises a crystalline polar layer comprising a base polar material substitutionally doped with a dopant. The base polar material comprises one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element of one of 4d series, 5d series, 4f series or 5f series that is different from the one or more metal elements, such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV.
A capacitor, comprising:
A capacitor, comprising:
A capacitor, comprising:
Dependencies are inferred from the claim text.