H10D 84/135
The built-in components being diodes
Official title: {the built-in components being diodes}
H10D84/135 (The built-in components being diodes) appears on 174 US grants and 129 published applications in this corpus.
Search patents in H10D- Granted patents
- 174
- Published applications
- 129
- Assignees
- 94
- Inventors
- 311
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 5 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 3 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 1 | 0 |
| 2001 | 3 | 0 |
| 2002 | 2 | 3 |
| 2003 | 2 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 1 |
| 2007 | 1 | 3 |
| 2008 | 1 | 0 |
| 2009 | 2 | 2 |
| 2010 | 1 | 2 |
| 2011 | 2 | 2 |
| 2012 | 1 | 2 |
| 2013 | 1 | 2 |
| 2014 | 6 | 10 |
| 2015 | 6 | 6 |
| 2016 | 13 | 21 |
| 2017 | 18 | 15 |
| 2018 | 13 | 16 |
| 2019 | 18 | 6 |
| 2020 | 6 | 7 |
| 2021 | 6 | 8 |
| 2022 | 3 | 5 |
| 2023 | 5 | 5 |
| 2024 | 6 | 4 |
| 2025 | 3 | 4 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Method for discharging static electricity11 Aug 2026US 12,707,725 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Reverse conducting power semiconductor device and method for manufacturing the same23 Sep 2025US 12,426,349 B2Hitachi Energy Ltd
- Turn-off power semiconductor device with gate runners24 Jun 2025US 12,342,559 B2Hitachi Energy Ltd
- FinFET thyristors with embedded transistor control for protecting high-speed communication systems25 Mar 2025US 12,261,593 B2Analog Devices, Inc.
- Method for discharging static electricity8 Oct 2026US 2026/0314080 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Diode triggered silicon controlled rectifiers19 Mar 2026US 2026/0082678 A1GLOBALFOUNDRIES U. S. Inc.
- Esd solution for 3dic die-to-die interface26 Feb 2026US 2026/0059866 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Finfet multi-diode thyristor switch for protecting high data rate communication system interfaces19 Jun 2025US 2025/0202471 A1Analog Devices, Inc.
- Electrostatic discharge protection device20 Mar 2025US 2025/0098330 A1VIA Technologies, Inc.
Most cited
By later US patents
- Semiconductor switching device78US 5,285,100 ATexas Instruments Incorporated · 1994
- Low voltage triggering silicon controlled rectifier structures for ESD protection59US 5,602,404 ANational Semiconductor Corporation · 1997
- Junction-isolated blocking voltage devices with integrated protection structures and methods of forming the same59US 8,796,729 B2Analog Devices, Inc. · 2014
- Externally controlled semiconductor devices with integral thyristor and bridging FET components52US 4,224,634 AASEA Aktiebolag · 1980
- Breakover-triggered dipole component having a controlled sensitivity34US 5,861,639 ASGS-Thomson Microelectronics S.A. · 1999