H10D 84/136
In anti-parallel configurations
Official title: {in anti-parallel configurations, e.g. reverse current thyristor [RCT]}
H10D84/136 (In anti-parallel configurations) appears on 85 US grants and 53 published applications in this corpus.
Search patents in H10D- Granted patents
- 85
- Published applications
- 53
- Assignees
- 43
- Inventors
- 154
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 4 | 0 |
| 1996 | 1 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 1 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 2 |
| 2014 | 2 | 5 |
| 2015 | 4 | 2 |
| 2016 | 9 | 17 |
| 2017 | 10 | 7 |
| 2018 | 5 | 4 |
| 2019 | 6 | 1 |
| 2020 | 2 | 2 |
| 2021 | 1 | 1 |
| 2022 | 0 | 3 |
| 2023 | 2 | 3 |
| 2024 | 3 | 1 |
| 2025 | 2 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate-commuted thyristor cell with a base region having a varying thickness8 Sep 2026US 12,733,225 B2Hitachi Energy Ltd
- Reverse conducting power semiconductor device and method for manufacturing the same23 Sep 2025US 12,426,349 B2Hitachi Energy Ltd
- Turn-off power semiconductor device with gate runners24 Jun 2025US 12,342,559 B2Hitachi Energy Ltd
- Power semiconductor device comprising a thyristor and a bipolar junction transistor19 Nov 2024US 12,148,818 B2Hitachi Energy Ltd
- Segmented power diode structure with improved reverse recovery23 Apr 2024US 11,967,638 B2Hitachi Energy Ltd
- Semiconductor device and method for operating a semiconductor device9 Jan 2025US 2025/0015172 A1Hitachi Energy Ltd
- Gate-commuted thyristor cell with a base region having a varying thickness16 May 2024US 2024/0162295 A1Hitachi Energy Ltd
- Turn-Off Power Semiconductor Device with Gate Runners4 May 2023US 2023/0136897 A1Hitachi Energy Switzerland AG
- Power Semiconductor Device Comprising a Thyristor and a Bipolar Junction Transistor20 Apr 2023US 2023/0118951 A1Hitachi Energy Switzerland AG
- Reverse Conducting Power Semiconductor Device and Method for Manufacturing the Same16 Feb 2023US 2023/0046742 A1Hitachi Energy Switzerland AG
Most cited
By later US patents
- Breakover-triggered dipole component having a controlled sensitivity34US 5,861,639 ASGS-Thomson Microelectronics S.A. · 1999
- Gate turn-off power semiconductor component28US 5,105,244 AAsea Brown Boveri AG · 1992
- Semiconductor component21US 4,742,382 ABBC Brown, Boveri & Company, Limited · 1988
- Semiconductor element with zone guard rings18US 4,377,816 ABBC Brown, Boveri & Company, Limited · 1983
- Electrostatic discharge (ESD) silicon controlled rectifier (SCR) with lateral gated section18US 9,318,479 B2Apple Inc. · 2016