Semiconductor device and method for operating a semiconductor device

A semiconductor device comprising

• a semiconductor body comprising a first side and a second side opposite to the first side,
• a first thyristor structure;
• and
• a second thyristor structure laterally beside the first thyristor structure, wherein
• each of the first thyristor structure and the second thyristor structure comprises a first base region at the first side and a gate electrode on the first side adjoining and being in electrical contact with the first base region,
• the first base region is of a same conductivity type and are each a region of the semiconductor body, wherein at least one region of the semiconductor body assigned to the first thyristor structure has a different doping concentration than a corresponding region of the semiconductor body assigned to the second thyristor structure,
• the gate electrode is are individually and independently electrically contactable, and
• doping concentrations in the first thyristor structure are adjusted such that, when turned on by a gate current impressed through the gate electrode, the first thyristor structure does not latch.