H10D 84/161
Igbt having built-in components
Official title: {IGBT having built-in components}
H10D84/161 (Igbt having built-in components) appears on 55 US grants and 213 published applications in this corpus.
Search patents in H10D- Granted patents
- 55
- Published applications
- 213
- Assignees
- 36
- Inventors
- 300
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 3 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 2 |
| 2013 | 2 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 2 |
| 2016 | 3 | 5 |
| 2017 | 2 | 5 |
| 2018 | 3 | 5 |
| 2019 | 9 | 7 |
| 2020 | 4 | 4 |
| 2021 | 6 | 6 |
| 2022 | 3 | 4 |
| 2023 | 2 | 2 |
| 2024 | 2 | 12 |
| 2025 | 1 | 73 |
| 2026 | 5 | 78 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate8 Sep 2026US 12,733,247 B2Mitsubishi Electric Corporation
- Insulated-gate bipolar transistor device as well as a data transmission system implementing such insulated-gate bipolar transistor device18 Aug 2026US 12,713,707 B2Nexperia B. V.
- RC IGBT and method of producing an RC IGBT23 Jun 2026US 12,666,699 B2Infineon Technologies AG
- Semiconductor device14 Apr 2026US 12,604,518 B2Rohm Co., Ltd.
- Semiconductor device with improved control circuit pattern placement27 Jan 2026US 12,538,822 B2Fuji Electric Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304888 A1Fuji Electric Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304963 A1Rohm Co., Ltd.
- Semiconductor device24 Sep 2026US 2026/0293226 A1Kabushiki Kaisha Toshiba
- Semiconductor device24 Sep 2026US 2026/0293287 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- High voltage MIS transistor and semiconductor device54US 5,436,486 AFuji Electric Co., Ltd. · 1995
- Structure of insulated gate bipolar transistors39US 4,967,246 ANEC Corporation · 1990
- Vertical mis-field effect transistor with low forward resistance27US 4,630,084 ASiemens Aktiengesellschaft · 1986
- Semiconductor protection device and power converting system20US 6,268,990 B1Kabushiki Kaisha Toshiba · 2001
- Insulated gate transistor with vertical integral diode and method of fabrication18US 4,933,740 AGeneral Electric Company · 1990