RC IGBT and method of producing an RC IGBT

A method of producing a reverse conducting insulated gate bipolar transistor (RC IGBT), the method comprising:

• forming an active region with an IGBT section and, separate from the IGBT section, a diode section;
• forming a semiconductor body that forms a part of the active region and has a first side and a second side;
• forming a first load terminal at the first side and a second load terminal at the second side;
• forming a control terminal at the first side, wherein the control terminal is electrically insulated from the semiconductor body and comprises a control terminal finger that laterally overlaps, in the active region, with the diode section;
• and
• forming a plurality of control trenches that extend into the semiconductor body along a vertical direction, wherein each control trench has a control trench electrode electrically connected to the control terminal and configured to control a load current between the first load terminal and the second load terminal in the IGBT section, wherein at least one of the plurality of control trenches extends into both the IGBT section and the diode section, wherein the electrical connection between the control trench electrode of the at least one control trench and the control terminal is established at least based on an electrically conductive member arranged, in the diode section, in contact with the control terminal finger.