Semiconductor device

A semiconductor device including a transistor region and a diode region, comprising:

• a semiconductor layer having a first surface and a second surface opposite to the first surface;
• a first electrode provided on the first surface;
• and
• a second electrode provided on the second surface, wherein
• the semiconductor layer includes
• a first region of a first conductivity type provided between the first surface and the second surface of the semiconductor layer,
• a second region of a second conductivity type provided between a first surface side surface of the first region and a second surface side surface of the first region, a distance between a first surface side surface of the second region and the first electrode being longer than a distance between the first surface side surface of the first region and the first electrode,
• a conductive region located between the first surface and the second region, connected to the second region, and reaching the first surface,
• a third region of the second conductivity type provided between the first surface side surface of the first region and the first electrode,
• a fifth region of the first conductivity type electrically connected to the first electrode and provided between the third region and the first surface, and
• an insulation film located between the conductive region and the third region.