Semiconductor device

A semiconductor device, comprising:

• a semiconductor layer;
• a cell disposed on the semiconductor layer;
• an insulation film covering the cell;
• a main electrode portion disposed on the insulation film;
• a temperature sensing diode configured to detect temperature and including a first electrode and a second electrode;
• and
• a diode connection electrode externally connecting the first electrode, wherein
• the main electrode portion includes a first bonding region and a second bonding region,
• the first bonding region is electrically connected to the second electrode and is bonded to a first conductive member,
• the first conductive member externally connects the main electrode portion,
• the second bonding region is bonded to a second conductive member,
• the second conductive member externally connects the second electrode,
• the second bonding region and the first bonding region are disposed in different regions as viewed in a thickness-wise direction of the semiconductor layer, and
• as viewed in the thickness-wise direction of the semiconductor layer, the cell is disposed on a first semiconductor region of the semiconductor layer overlapping the first bonding region and is disposed on a second semiconductor region of the semiconductor layer overlapping the second bonding region.