Semiconductor device

A semiconductor device comprising:

• a drift region of a first conductivity type which is provided in a semiconductor substrate;
• a base region of a second conductivity type which is provided above the drift region;
• an emitter region of the first conductivity type which is provided above the drift region, and which has a doping concentration higher than that of the drift region;
• a plurality of contact regions of the second conductivity type which are provided above the drift region, and which have doping concentrations higher than that of the base region;
• a plurality of trench portions which extend in a predetermined trench extension direction, at a front surface of the semiconductor substrate;
• an emitter electrode which is provided above the semiconductor substrate, and which has a first main region, a second main region, and a third main region;
• a gate pad which is provided above the semiconductor substrate;
• a gate metal layer which is electrically connected to the gate pad;
• and
• a gate runner portion which is electrically connected to the gate metal layer, wherein
• the plurality of trench portions have a plurality of gate trench portions,
• the emitter electrode has:
• a first emitter bridge portion which connects the first main region to the second main region;
• and
• a second emitter bridge portion which connects the second main region to the third main region, and
• below the first emitter bridge portion, a gate trench portion that is different from a gate trench portion which is provided below the second emitter bridge portion is provided.