Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate

A semiconductor device comprising:

• a FWD region that is formed on a substrate and has, on an upper surface side of the substrate, a p-type anode region, a first p-type contact region having a higher p-type impurity concentration than the p-type anode region, and a first trench;
• an IGBT region that is formed on the substrate, surrounds the FWD region in plan view via a boundary region, and has an n-type emitter region, a second p-type contact region, and a second trench on the upper surface side of the substrate;
• a peripheral region that surrounds the FWD region, the boundary region, and the IGBT region in plan view;
• and
• an emitter electrode on the upper surface of the substrate,
• wherein the first trench is formed annularly along an outer edge of the FWD region in plan view,
• the second trench is formed annularly along an outer edge of the boundary region in plan view,
• only a p-type region is provided on an upper surface side of the boundary region,
• the p-type region has a first p-type region and a second p-type region having a lower p-type impurity concentration than the first p-type region,
• the first p-type region and the second p-type region are in contact with the emitter electrode,
• in plan view, an area ratio of the first p-type contact region per unit cell in the FWD region is a first area ratio, an area ratio of the first p-type region per unit cell in the boundary region is a second area ratio, and an area ratio of the second p-type contact region per unit cell in the IGBT region is a third area ratio, and
• a sum of the first area ratio and the second area ratio is smaller than the third area ratio.