H10D 84/121
Bjts having built-in components
Official title: {BJTs having built-in components}
H10D84/121 (Bjts having built-in components) appears on 347 US grants and 219 published applications in this corpus.
Search patents in H10D- Granted patents
- 347
- Published applications
- 219
- Assignees
- 148
- Inventors
- 546
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 5 | 0 |
| 1980 | 2 | 0 |
| 1981 | 4 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 6 | 0 |
| 1987 | 6 | 0 |
| 1988 | 7 | 0 |
| 1989 | 15 | 0 |
| 1990 | 14 | 0 |
| 1991 | 9 | 0 |
| 1992 | 5 | 0 |
| 1993 | 4 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 10 | 0 |
| 2000 | 8 | 0 |
| 2001 | 4 | 1 |
| 2002 | 6 | 8 |
| 2003 | 4 | 1 |
| 2004 | 3 | 5 |
| 2005 | 3 | 6 |
| 2006 | 3 | 14 |
| 2007 | 3 | 4 |
| 2008 | 2 | 4 |
| 2009 | 4 | 3 |
| 2010 | 5 | 11 |
| 2011 | 6 | 5 |
| 2012 | 8 | 5 |
| 2013 | 5 | 11 |
| 2014 | 15 | 14 |
| 2015 | 9 | 15 |
| 2016 | 21 | 8 |
| 2017 | 16 | 12 |
| 2018 | 8 | 8 |
| 2019 | 10 | 18 |
| 2020 | 14 | 19 |
| 2021 | 15 | 15 |
| 2022 | 18 | 7 |
| 2023 | 8 | 7 |
| 2024 | 8 | 11 |
| 2025 | 2 | 2 |
| 2026 | 3 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Field-effect transistor structure including passive device or bipolar junction transistor with back side power distribution network (BSPDN)26 May 2026US 12,641,865 B2Samsung Electronics Co., Ltd.
- Memory device having electrically floating body transistor27 Jan 2026US 12,538,469 B2Zeno Semiconductor, Inc.
- Semiconductor device and method for forming the same14 Oct 2025US 12,446,283 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit structure with diode over lateral bipolar transistor21 Jan 2025US 12,205,943 B2GLOBALFOUNDRIES U. S. Inc.
- Compact esd structure25 Jun 2026US 2026/0181925 A1Qorvo US, Inc.
- Methods and systems of operating a pnp bi-directional double-base bipolar junction transistor18 Jun 2026US 2026/0173419 A1Ideal Power Inc.
- Double well bipolar junction transistor for esd and surge protection18 Jun 2026US 2026/0173538 A1Semiconductor Components Industries, LLC
- Insulated gate bipolar transistor design and methods28 May 2026US 2026/0150354 A1Semiconductor Components Industries, LLC
- Diode structures of stacked transistors and methods of manufacturing the same23 Apr 2026US 2026/0114025 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Channel collector transistor100US 4,868,624 ARegents of the University of Minnesota · 1989
- Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor90US 5,146,298 A1992
- Power transistor structure with high speed integral antiparallel Schottky diode84US 4,967,243 AGeneral Electric Company · 1990
- Bidirectional field effect semiconductor device and circuit82US 4,961,100 AGeneral Electric Company · 1990
- Process to manufacture a vertical gate-enhanced bipolar transistor77US 5,776,813 AIndustrial Technology Research Institute · 1998