Field-effect transistor structure including passive device or bipolar junction transistor with back side power distribution network (BSPDN)
AssigneeSamsung Electronics Co., Ltd.
InventorsJaehong Lee, Seungchan Yun, Sooyoung Park, Kang-ill Seo
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Abstract
Provided is field-effect transistor structure including: a substrate including therein at least one 1st doped region, a 2nd doped region on one side of the 1st doped region, and a 3rd doped region on another side of the 1st doped region; a 1st channel structure including therein a 4th doped region on the 2nd doped region in the substrate; and a 2nd channel structure, at a side of the 1st channel structure, including therein a 5th doped region on the 3rd doped region in the substrate, wherein the 4th, 2nd, 1st, 3rd and 5th doped regions form a sequentially connected passive device.
Claims25
A field-effect transistor structure comprising:
- a substrate comprising therein at least one 1st doped region, a 2nd doped region on one side of the 1st doped region, and a 3rd doped region on another side of the 1st doped region;
- a 1st portion of a channel structure comprising therein a 4th doped region on the 2nd doped region in the substrate;
- and
- a 2nd portion of the channel structure, at a side of the 1st portion, comprising therein a 5th doped region on the 3rd doped region in the substrate,
- wherein the 4th, 2nd, 1st, 3rd and 5th doped regions form a sequentially connected passive device or bipolar junction transistor (BJT), and
- wherein at least one of the 4th doped region or the 5th doped region extends vertically from a top surface of the substrate through the channel structure.
A field-effect transistor structure comprising:
- a substrate comprising therein at least one 1st doped region, a 2nd doped region on one side of the 1st doped region, and a 3rd doped region on another side of the 1st doped region;
- a channel structure above a top surface of at least one of the 1st, 2nd, or 3rd doped regions;
- and
- a contact plug in contact with the 1st doped region,
- wherein the 2nd, 1st, and 3rd doped regions form a sequentially connected passive device or bipolar junction transistor.
A method of manufacturing a field-effect transistor structure comprising a passive device, the method comprising:
- providing an intermediate field-effect transistor structure comprising a substrate and a channel structure thereon;
- doping at least one 1st region of the substrate to form a 1st doped region;
- doping a 2nd region at a side of the 1st region in the substrate to form a 2nd doped region;
- doping a 3rd region at another side of the 1st region in the substrate to form a 3rd doped region;
- and
- forming a contact plug in contact with the 1st doped region,
- wherein the 2nd, 1st, and 3rd doped regions form a sequentially connected passive device or a bipolar junction transistor (BJT), and
- wherein the channel structure is above a top surface of at least one of the 1st, 2nd or 3rd doped regions.
Dependencies are inferred from the claim text.