Compact esd structure

A compact electrostatic discharge (ESD) structure comprising:

• a substrate;
• a sub-collector region over the substrate;
• a collector region over a first portion of the sub-collector region;
• a base region over the collector region;
• an emitter region over the base region, wherein the emitter region, the base region, and the collector region form a bipolar transistor;
• a cathode region over a second portion of the sub-collector region;
• an anode contact over the cathode region, wherein the cathode region and the anode contact form a Schottky diode;
• an emitter/anode bridge electrically coupling the emitter region to the anode contact, wherein the collector region and the cathode region are electrically coupled via the sub-collector region such that the bipolar transistor and the Schottky diode are connected in an anti-parallel;
• an emitter contact over the emitter region, wherein the emitter/anode bridge is coupled to the emitter contact;
• a collector/cathode contact over a third portion of the sub-collector region, wherein the third portion is between the first portion and the second portion;
• and
• a base contact over the base region.

A method for forming a compact electrostatic discharge (ESD) structure comprising:

• providing a substrate;
• providing a sub-collector region over the substrate;
• providing a collector region over a first portion of the sub-collector region and a cathode region over a second portion of the sub-collector region;
• providing a base region over the collector region;
• providing an emitter region over the base region, wherein the emitter region, the base region, and the collector region form a bipolar transistor;
• providing an anode contact over the cathode region, wherein the cathode region and the anode contact form a Schottky diode;
• and
• providing an emitter/anode bridge electrically coupling the emitter region to the anode contact, wherein the collector region and the cathode region are electrically coupled via the sub-collector region such that the bipolar transistor and the Schottky diode are connected in an anti-parallel.