Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor

A semiconductor device comprising:

• a drain contact;
• a single-sided JFET having a first end electrically coupled to the drain contact and having a second end;
• a double-sided JFET having a first end electrically coupled to the first end of the single-sided JFET and having a second end electrically coupled to the second end of the single-sided JFET;
• a source contact;
• a gate contact;
• an insulated field effect transistor having a gate region coupled to the gate contact, having a source region electrically coupled to the source contact, and having a drain region electrically coupled to the second end of the single-sided JFET and to the second end of the double-sided JFET.

A semiconductor device comprising:

• a substrate of first conductivity type;
• a layer of epitaxial material of second conductivity type deposited on a surface of the substrate;
• a body region of semiconductor material of the first conductivity type which is within the layer of epitaxial material and which adjoins the surface of the layer of epitaxial material;
• a source region of semiconductor material of the second conductivity type, the source region being within the body region and adjoining the surface of the layer of epitaxial material;
• a drain contact region of semiconductor material of the second conductivity type within the layer of epitaxial material which adjoins the surface of the layer of epitaxial material;
• a first intermediate region of semiconductor material of the first conductivity type which adjoins the surface of the layer of epitaxial material and which is located within the layer of epitaxial material between the body region and the drain contact region;
• and,
• a second intermediate region of semiconductor material of the second conductivity type which adjoins the surface of the layer of epitaxial material and which is located within the layer of epitaxial material between the body region and the drain contact region, wherein a portion of the second intermediate region extends between the first intermediate region and the surface of the layer of epitaxial material.

A semiconductor device comprising:

• a substrate of first conductivity type;
• a layer of epitaxial material of second conductivity type deposited on a surface of the substrate;
• a body region of semiconductor material of the first conductivity type which is within the layer of epitaxial material and which adjoins the surface of the layer of epitaxial material;
• a source region of semiconductor material of the second conductivity type, the source region being within the body region and adjoining the surface of the layer of epitaxial material;
• a drain contact region of semiconductor material of the second conductivity type within the layer of epitaxial material which adjoins the surface of the layer of epitaxial material;
• a first isolation layer of the first conductivity type diffused in the layer of epitaxial material;
• and,
• a buried layer of the second conductivity type diffused in the layer of epitaxial material and below the first isolation layer.

Shielding for a high power semiconductor device, the high power semiconductor device being placed in a layer of epitaxial material of second conductivity type deposited on a surface of a substrate of first conductivity type, the shielding comprising:

• an isolation layer of the first conductivity type diffused in the layer of epitaxial material;
• a first isolation region within the layer of epitaxial material and surrounding the high power semiconductor device, the first isolation region extending from the surface of the layer of epitaxial material to the isolation layer and the first isolation region being of the first conductivity type;
• a buried layer of the second conductivity type diffused into the layer of epitaxial material and below the isolation layer;
• a second isolation region surrounding the first isolation region, the second isolation region extending from the surface of the layer of epitaxial material to the buried layer and the second isolation region being of the second conductivity type;
• an epitaxial region surrounding the second isolation region, the epitaxial region extending from the surface of the layer of epitaxial material to a depth below the second isolation region;
• and,
• a third isolation region surrounding the epitaxial region, the third isolation region extending from the surface of the layer of epitaxial material and the third isolation region being of the first conductivity type.

A shielding for a high power semiconductor device within a layer of epitaxial material of first conductivity type deposited on a substrate of the first conductivity type, the shielding comprising:

• a well of second conductivity type which adjoins a surface of the layer of epitaxial material, the high power semiconductor device being placed in the well;
• a buried layer of the second conductivity type diffused into the layer of epitaxial material;
• an isolation region of first conductivity type, within the layer of epitaxial material located above the buried layer and surrounding the well;
• and,
• a sinker region of second conductivity type, placed above the buried layer and surrounding the isolation type.