H10D 84/141
Vdmos having built-in components
Official title: {VDMOS having built-in components}
H10D84/141 (Vdmos having built-in components) appears on 2,088 US grants and 2,304 published applications in this corpus.
Search patents in H10D- Granted patents
- 2,088
- Published applications
- 2,304
- Assignees
- 326
- Inventors
- 2,115
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 3 | 0 |
| 1986 | 3 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 9 | 0 |
| 1990 | 12 | 0 |
| 1991 | 8 | 0 |
| 1992 | 12 | 0 |
| 1993 | 7 | 0 |
| 1994 | 13 | 0 |
| 1995 | 11 | 0 |
| 1996 | 16 | 0 |
| 1997 | 16 | 0 |
| 1998 | 16 | 0 |
| 1999 | 18 | 0 |
| 2000 | 17 | 0 |
| 2001 | 13 | 7 |
| 2002 | 15 | 22 |
| 2003 | 19 | 19 |
| 2004 | 26 | 29 |
| 2005 | 20 | 37 |
| 2006 | 20 | 45 |
| 2007 | 24 | 39 |
| 2008 | 25 | 64 |
| 2009 | 37 | 73 |
| 2010 | 62 | 84 |
| 2011 | 81 | 86 |
| 2012 | 79 | 107 |
| 2013 | 93 | 94 |
| 2014 | 116 | 128 |
| 2015 | 121 | 114 |
| 2016 | 115 | 116 |
| 2017 | 104 | 106 |
| 2018 | 103 | 125 |
| 2019 | 120 | 134 |
| 2020 | 129 | 157 |
| 2021 | 118 | 124 |
| 2022 | 122 | 142 |
| 2023 | 90 | 126 |
| 2024 | 98 | 123 |
| 2025 | 104 | 108 |
| 2026 | 67 | 95 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Semiconductor device15 Sep 2026US 12,740,157 B2Nuvoton Technology Corporation Japan
- Semiconductor device8 Sep 2026US 12,733,246 B2Kabushiki Kaisha Toshiba
- Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate8 Sep 2026US 12,733,247 B2Mitsubishi Electric Corporation
- Semiconductor device with groove structure1 Sep 2026US 12,727,195 B2Rohm Co., Ltd.
- Semiconductor device having integrated planar mosfets and an integrated trench schottky barrier diode8 Oct 2026US 2026/0314038 A1Microchip Technology Incorporated
- Semiconductor device1 Oct 2026US 2026/0304828 A1Rohm Co., Ltd.
- Semiconductor device and power conversion apparatus1 Oct 2026US 2026/0304915 A1Mitsubishi Electric Corporation
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Device with fet gate and schottky barrier diode in same trench1 Oct 2026US 2026/0304917 A1Microchip Technology Incorporated
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002
- Multicellular FET having a Schottky diode merged therewith202US 5,111,253 AGeneral Electric Company · 1992