Semiconductor device and power conversion apparatus

A semiconductor device, comprising:

• a drift layer of a first conductivity type provided to an upper surface of a semiconductor substrate of a first conductivity type;
• a plurality of well regions of a second conductivity type provided separately from each other on a surface layer of the drift layer;
• a source region of a first conductivity type provided to a surface layer of at least one of the well regions;
• a first separation region of a first conductivity type as a region between the plurality of well regions on the surface layer of the drift layer;
• a second separation region of a first conductivity type as a region, different from the first separation region, between the plurality of well regions on the surface layer of the drift layer;
• a gate insulating film provided to have contact with at least one of the well regions sandwiched between the source region and the drift layer;
• a gate electrode provided to have contact with the gate insulating film;
• a Schottky electrode provided to an upper surface of the first separation region to have a Schottky junction with the first separation region;
• an ohmic electrode provided to an upper surface of the source region;
• and
• a source electrode provided to have contact with the Schottky electrode and the ohmic electrode, wherein
• the first separation region extends in a first direction and a second direction as a direction different from the first direction in a plan view,
• the first separation region includes at least one first folding region folded back in the second direction,
• the second separation region extends in at least the first direction in a plan view, and
• a width of the second separation region in the second direction is equal to or larger than a width of the first separation region in the first direction or the second direction.