H10D 84/143
The built-in components being pn junction diodes
Official title: {the built-in components being PN junction diodes}
H10D84/143 (The built-in components being pn junction diodes) appears on 688 US grants and 804 published applications in this corpus.
Search patents in H10D- Granted patents
- 688
- Published applications
- 804
- Assignees
- 131
- Inventors
- 1,009
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 1 |
| 2002 | 1 | 0 |
| 2003 | 2 | 6 |
| 2004 | 4 | 7 |
| 2005 | 5 | 10 |
| 2006 | 6 | 12 |
| 2007 | 4 | 5 |
| 2008 | 9 | 16 |
| 2009 | 4 | 16 |
| 2010 | 12 | 19 |
| 2011 | 22 | 22 |
| 2012 | 15 | 25 |
| 2013 | 20 | 22 |
| 2014 | 27 | 32 |
| 2015 | 28 | 40 |
| 2016 | 44 | 48 |
| 2017 | 42 | 43 |
| 2018 | 49 | 59 |
| 2019 | 60 | 64 |
| 2020 | 51 | 67 |
| 2021 | 55 | 54 |
| 2022 | 45 | 57 |
| 2023 | 37 | 47 |
| 2024 | 39 | 54 |
| 2025 | 42 | 42 |
| 2026 | 21 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor die with a vertical device6 Oct 2026US 12,757,477 B2Infineon Technologies Austria AG
- Semiconductor device including a FWD region formed on a substrate and IGBT region formed on the substrate8 Sep 2026US 12,733,247 B2Mitsubishi Electric Corporation
- Semiconductor device with groove structure1 Sep 2026US 12,727,195 B2Rohm Co., Ltd.
- Semiconductor device and method for manufacturing the semiconductor device25 Aug 2026US 12,720,848 B2Denso Corporation
- Semiconductor device including a first element structure with a column layer and a second element structure25 Aug 2026US 12,720,849 B2Rohm Co., Ltd.
- Semiconductor device1 Oct 2026US 2026/0304828 A1Rohm Co., Ltd.
- Dual gate trench mosfet with shielded gate electrode in step trench24 Sep 2026US 2026/0293283 A1Nami MOS CO., LTD.
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device3 Sep 2026US 2026/0262279 A1Fuji Electric Co., Ltd.
- Power mosfet and preparation method therefor27 Aug 2026US 2026/0255632 A1China Resources Microelectronics (Chongqing) Co., Ltd.
- Trench-implemented poly diodes and resistors27 Aug 2026US 2026/0255661 A1Semiconductor Components Industries, LLC
Most cited
By later US patents
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Trench-gated MOSFET with integral temperature detection diode201US 6,046,470 ASiliconix Incorporated · 2000
- Methods of making power semiconductor devices with thick bottom oxide layer133US 8,143,124 B2Fairchild Semiconductor Corporation · 2012
- Insulated gate type semiconductor device and method of manufacturing thereof85US 6,323,518 B1Hitachi, Ltd. · 2001
- Semiconductor device with protective means against overheating77US 4,760,434 ANippondenso Co., Ltd. · 1988