Trench-implemented poly diodes and resistors

A semiconductor device comprising:

• a first trench formed in a semiconductor substrate;
• a second trench formed in the semiconductor substrate;
• a first dielectric layer lining the first trench and the second trench;
• a first semiconductor material disposed in a lower portion of the first trench and a lower portion of the second trench, the first dielectric layer being disposed between the semiconductor substrate and the first semiconductor material in the first trench and in the second trench;
• a second dielectric layer disposed on the first semiconductor material in the first trench and in the second trench;
• a second semiconductor material disposed in an upper portion of the first trench and in an upper portion of the second trench, the first dielectric layer being disposed between the semiconductor substrate and the second semiconductor material in the first trench and in the second trench, the second dielectric layer being disposed between the first semiconductor material and the second semiconductor material in the first trench and in the second trench;
• and
• for each of the first trench and the second trench, at least one resistor defined in the second semiconductor material.

A method comprising:

• forming a trench in a semiconductor substrate;
• forming a shield dielectric layer lining the trench;
• forming a shield electrode in a lower portion of the trench, the shield dielectric layer being disposed between shield electrode and the semiconductor substrate;
• forming an interlayer dielectric layer on the shield electrode;
• forming a polysilicon electrode in an upper portion of the trench, the shield dielectric layer being disposed between the polysilicon electrode and the semiconductor substrate, the interlayer dielectric layer being disposed between the shield electrode and the polysilicon electrode;
• and
• doping the polysilicon electrode to define at least one resistor.