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US 5,111,253 AGranted
Multicellular FET having a Schottky diode merged therewith
AssigneeGeneral Electric Company
InventorsCharles S. Korman, Bantval J. Baliga, Hsueh-Rong Chang
Life of this patent
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Abstract
A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.
Claims31
A semiconductor device comprising:
- first and second main electrodes;
- a body of semiconductor material including:
- a multicellular FET including a plurality of FET cells each connected between said first and second main electrodes;
- and
- a Schottky diode connected between said first and second main electrodes;
- said Schottky diode including a plurality of Schottky contacts interspersed with said FET cells;
- a plurality of said FET cells not having Schottky contacts within the cells of said plurality;
- and
- at least one of said FET cells being spaced from the plurality of Schottky contacts by an intervening FET cell.
6 more elements
A semiconductor device comprising:
- first and second main electrodes;
- a body of semiconductor material including:
- a multicellular FET including a plurality of FET cells each connected between said first and second main electrodes;
- a Schottky diode connected between said first and second main electrodes;
- said Schottky diode spacing apart first and second ones of said FET cells within said body of semiconductor material;
- and
- at least one of said FET cells being spaced from said Schottky diode by an intervening FET cell.
4 more elements
A semiconductor device comprising:
- first and second main electrodes;
- and
- a body of semiconductor material including:
- a multicellular FET including a plurality of FET cells each connected between said first and second main electrodes,
- a multicellular Schottky diode including a plurality of Schottky diode cells each connected between said first and second main electrodes,
- said FET cells being interspersed with said Schottky diode cells, and
- at least one of said FET cells being spaced from the plurality of Schottky diode cells by an intervening FET cell.
4 more elements
A semiconductor device comprising a body of semiconductor material having first and second major opposed surfaces and including:
- a first main region of one type conductivity extending to both said first and second major surfaces;
- a plurality of base regions of opposite type conductivity each disposed in said first main region and extending to said second major surface;
- and
- a plurality of second main regions each disposed in one of said base regions and extending to said second major surface of said body;
- a first main electrode disposed on said first major surface of said body in ohmic contact with said first main region;
- a second main electrode disposed on said second major surface of said body in ohmic contact with each of said second main regions;
- an insulated gate electrode disposed on said second major surface of said body and extending from (1) over each of said second main regions across a portion of the base region in which said each of said second main regions is disposed to (2) over said first main region to control the conductivity of a channel extending through said base region between said each of said second main regions and said first main region;
- said base regions, second main regions and said gate electrode together with said first main region comprising a multicellular field effect transistor structure in which each of said base regions is part of a different FET cell;
- said second main electrode also being disposed in Schottky contact with said first main region at said second major surface of said body to form a Schottky diode connected between said first and second main electrodes;
- said Schottky diode including a plurality of Schottky contacts interspersed with said field effect transistor cells;
- a plurality of said FET cells not having Schottky contacts within the cells of said plurality;
- and
- at least one of said FET cells being spaced from the plurality of Schottky contacts by an intervening FET cell.
10 more elements
A semiconductor device comprising a body of semiconductor material having first and second major opposed surfaces and including:
- a first main region of one type conductivity extending to both said first and second major surfaces;
- a plurality of base regions of opposite type coductivity each disposed in said first main region and extending to said second major surface;
- and
- a plurality of second main regions each disposed in one of said base regions and extending to said second major surface of said body;
- a first main electrode disposed on said first major surface of said body in ohmic contact with said first main region,
- a second main electrode disposed on said second major surface of said body in ohmic contact with each of said second main regions;
- an insulated gate electrode disposed on said second major surface of said body and extending from (1) over each of said second main regions across a portion of the base region in which said each of said second main regions is disposed to (2) over said first main region to control the conductivity of a channel extending through said base region between said each of said second main regions and first main region;
- said base regions, second main regions and said gate electrode together with said first main region comprising a multicellular field effect transistor structure in which each of said base regions is part of a different FET cell;
- said second main electrode also being disposed in Schottky contact with said first main region at said second major surface of said body, in the central portion of the active area of said second major surface, to form a Schottky diode connected between said first and second main electrodes and substantially centered within the area occupied by said multicellular field effect transistor;
- and
- a plurality of said FET cells not having a Schottky contact within the cells of said plurality.
8 more elements
A semiconductor device comprising a body of semiconductor material having first and second major opposed surfaces and including:
- a first main region of one type conductivity extending to both said first and second major surfaces;
- a plurality of base regions of opposite type conductivity each disposed in said first main region and extending to said second major surface;
- and
- a plurality of second main regions each disposed in one of said base regions and extending to said second major surface of said body;
- a first main electrode disposed on said first major surface of said body in ohmic contact with said first main region;
- a second main electrode disposed on said second major surface of said body in ohmic contact with each of said base and second main regions;
- an insulated gate electrode disposed on said second major surface of said body and extending from (1) over each of said second main regions across a portion of the base region in which said each of said second main regions is disposed to (2) over said first main region to control the conductivity of a channel extending through said base region between said each of said second main regions and first main region;
- said base regions, second main regions and said gate electrode together with said first main region comprising a multicellular field effect transistor structure in which each of said base regions is part of a different FET cell;
- said second main electrode also being disposed in Schottky contact with said first main region at said second major surface of said body to form a Schottky diode connected between said first and second main electrodes;
- said Schottky diode being interspersed with said field effect transistor cells;
- a plurality of said FET cells not having a Schottky contact within the cells of said plurality;
- and
- at least one of said base regions having channel region portions at opposed sides thereof and including a heavily doped portion disposed between said opposed channel region portions and extending into ohmic contact with said second main electrode.
10 more elements
Dependencies are inferred from the claim text.