H10D 84/146
The built-in components being schottky barrier diodes
Official title: {the built-in components being Schottky barrier diodes}
H10D84/146 (The built-in components being schottky barrier diodes) appears on 719 US grants and 848 published applications in this corpus.
Search patents in H10D- Granted patents
- 719
- Published applications
- 848
- Assignees
- 175
- Inventors
- 846
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 3 | 0 |
| 1991 | 2 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 1 | 0 |
| 1999 | 6 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 7 | 8 |
| 2003 | 4 | 9 |
| 2004 | 14 | 11 |
| 2005 | 8 | 13 |
| 2006 | 10 | 16 |
| 2007 | 5 | 12 |
| 2008 | 8 | 25 |
| 2009 | 15 | 30 |
| 2010 | 23 | 31 |
| 2011 | 35 | 38 |
| 2012 | 30 | 42 |
| 2013 | 42 | 35 |
| 2014 | 50 | 50 |
| 2015 | 42 | 40 |
| 2016 | 42 | 42 |
| 2017 | 40 | 35 |
| 2018 | 28 | 31 |
| 2019 | 31 | 39 |
| 2020 | 46 | 63 |
| 2021 | 39 | 37 |
| 2022 | 43 | 52 |
| 2023 | 32 | 51 |
| 2024 | 30 | 42 |
| 2025 | 41 | 43 |
| 2026 | 24 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device8 Sep 2026US 12,733,246 B2Kabushiki Kaisha Toshiba
- Power module including a semiconductor device with parasitic diode4 Aug 2026US 12,701,770 B2Hon Young Semiconductor Corporation
- Power semiconductor device and method for fabricating the same14 Jul 2026US 12,684,842 B2Hyundai Motor Company
- SiC MOSFETs with saturation current pinching structures7 Jul 2026US 12,677,450 B2Nami MOS CO., LTD.
- Silicon carbide semiconductor device and power conversion device using silicon carbide semiconductor device30 Jun 2026US 12,672,339 B2Mitsubishi Electric Corporation
- Semiconductor device having integrated planar mosfets and an integrated trench schottky barrier diode8 Oct 2026US 2026/0314038 A1Microchip Technology Incorporated
- Semiconductor device and power conversion apparatus1 Oct 2026US 2026/0304915 A1Mitsubishi Electric Corporation
- Apparatus including fet and integrated sbd located inside of fet unit cell1 Oct 2026US 2026/0304916 A1Microchip Technology Incorporated
- Device with fet gate and schottky barrier diode in same trench1 Oct 2026US 2026/0304917 A1Microchip Technology Incorporated
- Semiconductor device24 Sep 2026US 2026/0293244 A1Kabushiki Kaisha Toshiba
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Power semiconductor devices and methods of manufacture273US 7,345,342 B2Fairchild Semiconductor Corporation · 2008
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002
- Multicellular FET having a Schottky diode merged therewith202US 5,111,253 AGeneral Electric Company · 1992