Silicon carbide semiconductor device and power conversion device using silicon carbide semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsShiro Hino, Kotaro Kawahara
Life of this patent
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Abstract
A silicon carbide semiconductor device according to the present disclosure includes: an n-type drift layer on an n-type semiconductor substrate; p-type well regions in a surface layer of the drift layer; an n-type first separation region between the well regions; an n-type second separation region; an n-type source region in each of the well regions; a p-type contact region; an n-type current diffusion region in a surface layer of each of the well regions; a gate insulating film; a gate electrode; an ohmic electrode; a Schottky electrode on the first separation region.
Claims9
A silicon carbide semiconductor device, comprising:
- a drift layer of a first conductivity type of a silicon carbide semiconductor formed on a first main surface of a semiconductor substrate of the first conductivity type;
- well regions of a second conductivity type formed separately in a cross-sectional lateral direction in a surface layer of the drift layer and including a first separation region of the first conductivity type therebetween;
- a second separation region of the first conductivity type formed in a region where the first separation region is not formed between the well regions;
- a source region of the first conductivity type formed in an inner part of a surface layer of a semiconductor in a cross-sectional lateral direction in each of the well regions;
- a contact region of the second conductivity type formed on a side closer to the first separation region in relation to the source region in the inner part of the surface layer of the semiconductor in the cross-sectional lateral direction in each of the well regions;
- a current diffusion region of the first conductivity type formed in a surface layer part of each of the well regions between the contact region and the first separation region;
- a gate insulating film formed on the second separation region and each of the well regions adjacent to the second separation region;
- a gate electrode formed on the gate insulating film;
- an ohmic electrode formed on the contact region;
- a Schottky electrode formed on the first separation region to be Schottky-connected to the first separation region;
- a source electrode formed on the ohmic electrode and the Schottky electrode;
- and
- a drain electrode formed on a second main surface of the semiconductor substrate located on a side opposite to the first main surface.
Dependencies are inferred from the claim text.