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AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorsShunsuke ASABA, Hiroshi KONO
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Semiconductor device includes: first electrode; second electrode; silicon carbide layer between first and second electrodes, having first face, and including first conductive first silicon carbide region including first region and second region in contact with first face, second conductive second silicon carbide region between first silicon carbide region and first face, second conductive third silicon carbide region spaced from second silicon carbide region in first direction, first conductive fourth silicon carbide region between second silicon carbide region and first face and in contact with first portion of first electrode, and second conductive fifth silicon carbide region provided between first and second regions and provided in first direction of first portion, first and second regions provided between second and third silicon carbide regions; and gate electrode facing first and second regions, and fifth silicon carbide region.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.