Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor layer connected to the first electrode, the first semiconductor layer including silicon and carbon, the first semiconductor layer being of a first conductivity type;
• a plurality of second semiconductor layers located on a portion of the first semiconductor layer, the plurality of second semiconductor layers including silicon and carbon, the plurality of second semiconductor layers being of a second conductivity type;
• a third semiconductor layer located on a portion of the second semiconductor layer, the third semiconductor layer including silicon and carbon, the third semiconductor layer being of the first conductivity type;
• a fourth semiconductor layer located in a portion of the first semiconductor layer between the second semiconductor layers, the fourth semiconductor layer including silicon and carbon, the fourth semiconductor layer being of the second conductivity type;
• a second electrode facing the second semiconductor layer via an insulating film;
• and
• a third electrode connected to the second and third semiconductor layers, wherein
• an upper surface of the fourth semiconductor layer is positioned lower than an upper surface of the second semiconductor layer, and
• a lower surface of the fourth semiconductor layer is positioned higher than a lower surface of the second semiconductor layer.

A semiconductor device, comprising:

• a first electrode;
• a first semiconductor layer connected to the first electrode, the first semiconductor layer being of a first conductivity type;
• a second semiconductor layer located on a portion of the first semiconductor layer, the second semiconductor layer being of a second conductivity type;
• a third semiconductor layer located on a portion of the second semiconductor layer, the third semiconductor layer being of the first conductivity type;
• a fourth semiconductor layer located on a side surface of the second semiconductor layer in the first semiconductor layer, the fourth semiconductor layer being of the second conductivity type;
• a second electrode located in a region including a region directly above the fourth semiconductor layer, the second electrode facing the second semiconductor layer;
• and
• a third electrode connected to the second and third semiconductor layers, wherein
• an upper surface of the fourth semiconductor layer is positioned lower than an upper surface of the second semiconductor layer, and
• a lower surface of the fourth semiconductor layer is positioned higher than a lower surface of the second semiconductor layer.