H10D 84/148
The built-in components being breakdown diodes
Official title: {the built-in components being breakdown diodes, e.g. Zener diodes}
H10D84/148 (The built-in components being breakdown diodes) appears on 390 US grants and 347 published applications in this corpus.
Search patents in H10D- Granted patents
- 390
- Published applications
- 347
- Assignees
- 118
- Inventors
- 437
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 3 | 0 |
| 1992 | 6 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 7 | 0 |
| 1997 | 4 | 0 |
| 1998 | 8 | 0 |
| 1999 | 8 | 0 |
| 2000 | 9 | 0 |
| 2001 | 8 | 4 |
| 2002 | 7 | 10 |
| 2003 | 6 | 4 |
| 2004 | 7 | 10 |
| 2005 | 8 | 13 |
| 2006 | 5 | 10 |
| 2007 | 7 | 12 |
| 2008 | 8 | 18 |
| 2009 | 11 | 17 |
| 2010 | 16 | 21 |
| 2011 | 25 | 21 |
| 2012 | 21 | 25 |
| 2013 | 21 | 19 |
| 2014 | 23 | 24 |
| 2015 | 21 | 17 |
| 2016 | 24 | 18 |
| 2017 | 9 | 8 |
| 2018 | 6 | 14 |
| 2019 | 14 | 9 |
| 2020 | 11 | 13 |
| 2021 | 12 | 15 |
| 2022 | 15 | 14 |
| 2023 | 10 | 5 |
| 2024 | 12 | 10 |
| 2025 | 10 | 12 |
| 2026 | 4 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device having drive circuit configured to output voltages applied to plurality of gate electrodes21 Jul 2026US 12,690,262 B2Denso Corporation
- Device integrating trench type power device and source capacitor and manufacturing method thereof19 May 2026US 12,635,254 B2Chongqing Alpha and Omega Semiconductor Limited
- Power MOSFET with gate-source ESD diode structure21 Apr 2026US 12,610,593 B2Diodes Incorporated
- Trench gate metal oxide semiconductor field effect transistor and method of manufacture10 Feb 2026US 12,550,456 B2Nexperia B. V.
- Semiconductor device including zener diode ring and manufacturing method of forming the same2 Dec 2025US 12,490,519 B2Panjit International Inc.
- Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device3 Sep 2026US 2026/0262279 A1Fuji Electric Co., Ltd.
- Active clamp circuit and semiconductor device20 Aug 2026US 2026/0247692 A1Shindengen Electric Manufacturing Co., Ltd.
- Active clamp circuit and semiconductor device23 Jul 2026US 2026/0213527 A1Shindengen Electric Manufacturing Co., Ltd.
- Semiconductor device21 May 2026US 2026/0143791 A1Denso Corporation
- Power Semiconductor Device and Method of Producing a Power Semiconductor Device9 Oct 2025US 2025/0318252 A1Infineon Technologies Austria AG
Most cited
By later US patents
- Power semiconductor devices having improved high frequency switching and breakdown characteristics442US 5,998,833 ANorth Carolina State University · 1999
- Trench-gated MOSFET with bidirectional voltage clamping314US 6,049,108 ASiliconix Incorporated · 2000
- Power semiconductor devices having trench-based gate electrodes and field plates232US 6,388,286 B1North Carolina State University · 2002
- Trench-gated MOSFET with integral temperature detection diode201US 6,046,470 ASiliconix Incorporated · 2000
- Vertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layer183US 5,814,858 ASiliconix Incorporated · 1998