Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate having an element region and a peripheral region disposed around the element region;
• an upper electrode covering an upper surface of the semiconductor substrate in the element region;
• an insulating film covering an upper surface of the semiconductor substrate in the peripheral region;
• a lower electrode covering a lower surface of the semiconductor substrate in an area over the element region and the peripheral region;
• a semiconductor layer disposed on the insulating film and having a diode provided thereon;
• an anode electrode provided on the semiconductor substrate;
• and
• a switching element disposed in the element region to pass a current between the upper electrode and the lower electrode, wherein
• the semiconductor substrate includes:
• a first n-type layer disposed within the peripheral region and located in a range including a corner between the upper surface and a side surface of the semiconductor substrate;
• a second n-type layer disposed within the peripheral region and located below the first n-type layer to be in contact with the lower electrode;
• and
• an n-type drift layer distributed across the element region and the peripheral region to have an n-type impurity concentration lower than those of the first n-type layer and the second n-type layer,
• the n-type drift layer is disposed between the first n-type layer and the second n-type layer and in contact with both of the first n-type layer and the second n-type layer,
• an anode of the diode is electrically connected to the anode electrode, and
• a cathode of the diode is electrically connected to the first n-type layer.