Semiconductor device having drive circuit configured to output voltages applied to plurality of gate electrodes

A semiconductor device comprising:

• a semiconductor element including a substrate, a front surface electrode disposed adjacent to a front surface of the substrate, a back surface electrode disposed adjacent to a back surface of the substrate, and a plurality of gate electrodes disposed adjacent to the front surface of the substrate, the semiconductor element being configured so that an electrical conduction and cutoff between the front surface electrode and the back surface electrode is controlled by application of voltages to the plurality of gate electrodes;
• a control circuit including a connection circuit that connects a drive circuit and the plurality of gate electrodes, the drive circuit being configured to output the voltages applied to the plurality of gate electrodes;
• and
• an electrical connection member disposed on a front surface side of the semiconductor element and electrically connected to the front surface electrode, wherein
• the plurality of gate electrodes include a first gate electrode and a second gate electrode,
• the semiconductor element has a cell region,
• the cell region includes a first cell region that allows a current to flow between the front surface electrode and the back surface electrode when the first gate electrode is applied with the voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with the voltage,
• the semiconductor element and the control circuit are configured to generate a time difference in current cutoff between the first cell region and the second cell region at a time of cutting off the currents flowing through the first cell region and the second cell region,
• the drive circuit and the first gate electrode are connected to each other via a first resistor,
• the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor,
• the second gate electrode and the back surface electrode are connected to each other via a bidirectional Zener diode, and
• a breakdown voltage of the bidirectional Zener diode on a second gate electrode side is larger than a voltage applied to the second gate electrode in a normal operation of the semiconductor element.

A semiconductor device comprising:

• a semiconductor element including a substrate, a front surface electrode disposed adjacent to a front surface of the substrate, a back surface electrode disposed adjacent to a back surface of the substrate, and a plurality of gate electrodes disposed adjacent to the front surface of the substrate, the semiconductor element being configured so that an electrical conduction and cutoff between the front surface electrode and the back surface electrode is controlled by application of voltages to the plurality of gate electrodes;
• a control circuit including a connection circuit that connects a drive circuit and the plurality of gate electrodes, the drive circuit being configured to output the voltages applied to the plurality of gate electrodes;
• and
• an electrical connection member disposed on a front surface side of the semiconductor element and electrically connected to the front surface electrode, wherein
• the plurality of gate electrodes include a first gate electrode and a second gate electrode,
• the semiconductor element has a cell region,
• the cell region includes a first cell region that allows a current to flow between the front surface electrode and the back surface electrode when the first gate electrode is applied with the voltage, and a second cell region that allows a current to flow between the front surface electrode and the back surface electrode when the second gate electrode is applied with the voltage,
• the semiconductor element and the control circuit are configured to generate a time difference in current cutoff between the first cell region and the second cell region at a time of cutting off the currents flowing through the first cell region and the second cell region,
• the drive circuit and the first gate electrode are connected to each other via a first resistor,
• the drive circuit and the second gate electrode are connected to each other via a second resistor having a resistance value equal to that of the first resistor, and
• the second gate electrode and the front surface electrode are connected to each other via a circuit in which a third resistor and a capacitor are connected in series.