Device integrating trench type power device and source capacitor and manufacturing method thereof

A manufacturing method of a device integrating a trench type power device and a source capacitor, comprising:

• step A, preparing a cellular structure;
• step B, preparing contact holes and tungsten bolts;
• step C, accessing an electro-static discharge (ESD) diode and an integrated capacitor into the trench type power device;
• and
• step D, depositing a passivation layer, etching a pad region, and performing wire bonding;
• wherein the step C specifically comprises:
• step S20, depositing metal aluminum copper on each of the tungsten bolts through a magnetron sputtering method, and forming an electric circuit through a photoetching method and dry etching, where a first tungsten bolt in one side of the interconnection gate contact hole distal from the two source region trench contact holes and a second tungsten bolt in one side of each of the ESD diode end contact holes distal from the two source region trench contact holes are connected through the metal aluminum copper, a third tungsten bolt in one side of each of the two source region trench contact holes, a fourth tungsten bolt in one side of each of the ESD diode end contact holes close to the two source region trench contact holes, and a fifth tungsten bolt in the integrated capacitor lower polar plate contact hole are connected through the metal aluminum copper, the metal aluminum copper is deposited above a sixth tungsten bolt in the integrated capacitor upper polar plate contact hole, so as to access the ESD diode and the integrated capacitor into the trench type power device.