Power MOSFET with gate-source ESD diode structure
AssigneeDiodes Incorporated
InventorsWan-Yu Kai, Chia-Wei Hu, Ta-Chuan Kuo
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Abstract
An apparatus includes a drain and a source on opposing sides of an epitaxial layer, a plurality of gates formed in the epitaxial layer, a source contact connected to the source, a gate contact connected to the plurality of gates, a gate-source electrostatic discharge (ESD) diode connected between the gate contact and the source contact, and a breakdown voltage enhancement and leakage prevention structure formed underneath the gate-source ESD diode structure, wherein the breakdown voltage enhancement and leakage prevention structure comprises a body ring structure.
Claims20
An apparatus comprising:
- a drain and a source on opposing sides of an epitaxial layer;
- a plurality of gates formed in the epitaxial layer;
- a source contact connected to the source;
- a gate contact connected to the plurality of gates;
- a gate-source Electrostatic Discharge (ESD) diode structure connected between the gate contact and the source contact, wherein the gate-source ESD diode structure comprises a first p-type region, a first n+ region, a second p-type region, a second n+ region, and a third p-type region connected in cascade, the first p-type region being connected to the gate contact and the third p-type region being connected to the source contact, and wherein a first p+ region is formed in the first p-type region of the gate-source ESD diode structure and a second p+ region is formed in the third p-type region of the gate-source ESD diode structure;
- and
- a breakdown voltage enhancement and leakage prevention structure formed underneath the gate-source ESD diode structure, wherein the breakdown voltage enhancement and leakage prevention structure surrounds the plurality of gates and comprises a body ring structure.
An apparatus comprising:
- an epitaxial layer over a substrate;
- a plurality of gates formed in the epitaxial layer;
- a first source and a second source in the epitaxial layer;
- a first body region and a second body region in the epitaxial layer;
- a breakdown voltage enhancement and leakage prevention structure formed in the epitaxial layer, the breakdown voltage enhancement and leakage prevention structure surrounding the plurality of gates and comprising a body ring structure, wherein the body ring structure is a concentric ring structure;
- a gate-source electrostatic discharge (ESD) diode structure over the epitaxial layer, wherein the gate-source ESD diode structure comprises a first p-type region, a first n+region, a second p-type region, a second n+region, and a third p-type region connected in cascade, the first p-type region being connected to the gate contact and the third p-type region being connected to the source contact;
- a source contact connected to the first source, the second source, and a first terminal of the gate-source ESD diode structure;
- and
- a gate contact connected to the plurality of gates and a second terminal of the gate- source ESD diode structure.
Dependencies are inferred from the claim text.