Trench gate metal oxide semiconductor field effect transistor and method of manufacture

A Metal Oxide Semiconductor Field Effect Transistor (MOSFET), comprising a semiconductor body having a first major surface, and a trench extending into the semiconductor body from the first major surface and connected to a gate region, wherein the semiconductor body comprises:

• a source region of a first conductivity type adjacent a sidewall of the trench at the first major surface;
• a drain region of the first conductivity type adjacent the trench at a position distant from the source region;
• a channel-accommodating region, of a second conductivity type opposite to the first conductivity type, adjacent the sidewall of the trench between the source region and the drain region;
• wherein the semiconductor body further comprises an Electro Static Discharge (ESD) region of the first conductivity type, spaced apart from the trench and extending from the first major surface towards, but not into, the drain region;
• wherein the ESD region comprises a first region of the second conductivity type and the first region is connected to the gate region;
• and
• wherein the ESD region further comprises a second region of the second conductivity type;
• wherein the second region is spaced apart from the first region;
• and wherein the second region is connected to a body region between the source region and the gate region to form two back to back diodes between the gate region and the body region.