H10D 84/151
Ldmos having built-in components
Official title: {LDMOS having built-in components}
H10D84/151 (Ldmos having built-in components) appears on 460 US grants and 503 published applications in this corpus.
Search patents in H10D- Granted patents
- 460
- Published applications
- 503
- Assignees
- 168
- Inventors
- 727
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 4 |
| 2002 | 2 | 4 |
| 2003 | 8 | 5 |
| 2004 | 6 | 3 |
| 2005 | 4 | 7 |
| 2006 | 5 | 14 |
| 2007 | 3 | 15 |
| 2008 | 3 | 9 |
| 2009 | 9 | 13 |
| 2010 | 19 | 24 |
| 2011 | 21 | 21 |
| 2012 | 25 | 39 |
| 2013 | 29 | 23 |
| 2014 | 27 | 33 |
| 2015 | 37 | 42 |
| 2016 | 38 | 29 |
| 2017 | 29 | 29 |
| 2018 | 26 | 27 |
| 2019 | 28 | 21 |
| 2020 | 28 | 31 |
| 2021 | 22 | 14 |
| 2022 | 20 | 32 |
| 2023 | 20 | 19 |
| 2024 | 15 | 14 |
| 2025 | 9 | 21 |
| 2026 | 9 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with schottky barrier interface and manufacturing method thereof1 Sep 2026US 12,727,236 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- High voltage semiconductor device having Schottky barrier diode25 Aug 2026US 12,720,850 B2SK keyfoundry Inc.
- Semiconductor device and fabricating method of the same23 Jun 2026US 12,666,704 B2United Microelectronics Corp.
- Rectifier14 Apr 2026US 12,603,585 B2Rohm Co., Ltd.
- Rectifier23 Jul 2026US 2026/0213673 A1Rohm Co., Ltd.
- Semiconductor structures and methods of manufacturing semiconductor structures16 Jul 2026US 2026/0206295 A1Semiconductor Components Industries, LLC
- Transistor assemblies with gate current shunting capability, and associated methods2 Jul 2026US 2026/0189227 A1Analog Devices, Inc.
- High power switch with improved avalanche breakdown voltage using well blocking11 Jun 2026US 2026/0164765 A1NXP USA, Inc.
- Semiconductor device30 Apr 2026US 2026/0123056 A1Sanken Electric Co., Ltd.
Most cited
By later US patents
- Monolithic semiconductor switching device103US 4,199,774 AThe Board of Trustees of the Leland Stanford Junior University · 1980
- Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor90US 5,146,298 A1992
- Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices75US 8,569,842 B2Infineon Technologies Austria AG · 2013
- Drain-extended MOS transistors with diode clamp and methods for making the same57US 7,187,033 B2Texas Instruments Incorporated · 2007
- Semiconductor device having trench filled up with gate electrode42US 6,525,375 B1Denso Corporation · 2003