US 12,727,236 B2 · Semiconductor device with schottky barrier interface and manufacturing method thereof

Abstract

The present disclosure provides a semiconductor device, including a substrate, a first dopant region in the substrate, wherein the first dopant is doped with a first conductivity type dopant, a first drift region at a top surface of the substrate, a first drain region adjacent to the first drift region, a second drain region, wherein an upper portion of the first dopant region is between the first drain region and the second drain region, and a first conductive layer connecting the first drain region, the second drain region, and a top surface of the upper portion of the first dopant region, wherein a Schottky barrier interface is formed between the top surface of the upper portion of the first dopant region and the first conductive layer.

Claims20

Dependent claims

A semiconductor device, comprising:

a substrate;
a first dopant region in the substrate, wherein the first dopant region is doped with a first conductivity type dopant;
a first drift region on a top surface of the substrate;
a first drain region adjacent to the first drift region;
a second drain region, wherein an upper portion of the first dopant region is between the first drain region and the second drain region;
and
a first conductive layer connecting the first drain region, the second drain region, and a top surface of the upper portion of the first dopant region, wherein a Schottky barrier interface is formed between the top surface of the upper portion of the first dopant region and the first conductive layer.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device with schottky barrier interface and manufacturing method thereof

Life of this patent

Semiconductor device with schottky barrier interface and manufacturing method thereof

Life of this patent

Abstract

Claims20