H10D 84/156
The built-in components being schottky barrier diodes
Official title: {the built-in components being Schottky barrier diodes}
H10D84/156 (The built-in components being schottky barrier diodes) appears on 79 US grants and 96 published applications in this corpus.
Search patents in H10D- Granted patents
- 79
- Published applications
- 96
- Assignees
- 59
- Inventors
- 175
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 2 |
| 2004 | 2 | 0 |
| 2005 | 0 | 4 |
| 2006 | 3 | 5 |
| 2007 | 0 | 3 |
| 2008 | 1 | 1 |
| 2009 | 2 | 3 |
| 2010 | 7 | 3 |
| 2011 | 3 | 7 |
| 2012 | 5 | 12 |
| 2013 | 10 | 10 |
| 2014 | 6 | 4 |
| 2015 | 9 | 6 |
| 2016 | 3 | 1 |
| 2017 | 1 | 2 |
| 2018 | 2 | 2 |
| 2019 | 2 | 3 |
| 2020 | 3 | 8 |
| 2021 | 5 | 4 |
| 2022 | 4 | 4 |
| 2023 | 2 | 2 |
| 2024 | 1 | 2 |
| 2025 | 2 | 8 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with schottky barrier interface and manufacturing method thereof1 Sep 2026US 12,727,236 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage semiconductor device having Schottky barrier diode25 Aug 2026US 12,720,850 B2SK keyfoundry Inc.
- Silicon carbide semiconductor device and power conversion device30 Dec 2025US 12,513,976 B2Mitsubishi Electric Corporation
- Multi-level gate driver applied to SiC MOSFET14 Jan 2025US 12,199,150 B2University of Electronic Science and Technology of China
- High voltage device and manufacturing method thereof16 Apr 2024US 11,961,833 B2Richtek Technology Corporation
- Sic semiconductor device30 Oct 2025US 2025/0338546 A1Rohm Co., Ltd.
- Sic semiconductor device16 Oct 2025US 2025/0324691 A1Rohm Co., Ltd.
- Semiconductor device9 Oct 2025US 2025/0316611 A1Rohm Co., Ltd.
- 4h-sic lateral bidirectional jbs diode integrated mosfet2 Oct 2025US 2025/0311391 A1The Research Foundation for The State University of New York
- Front-End-Of-Line (FEOL) and Middle-of-Line (MOL) of Planar SCMOS Fabrication Processes7 Aug 2025US 2025/0254978 A1Schottky Lsi, Inc.
Most cited
By later US patents
- Insulated-gate field-effect transistors39US 4,521,795 AU. S. Philips Corporation · 1985
- LDMOS integrated Schottky diode39US 7,745,846 B2Ciclon Semiconductor Device Corp. · 2010
- Latch-up free vertical TVS diode array structure using trench isolation33US 7,880,223 B2Alpha and Omega Semiconductor Incorporated · 2011
- Semiconductor device25US 6,806,548 B2Renesas Technology Corp. · 2004
- LDMOS transistor17US 7,141,860 B2Freescale Semiconductor, Inc. · 2006