High voltage semiconductor device having Schottky barrier diode

A semiconductor device comprising:

• a source region and a drain region formed in a substrate;
• a gate electrode formed between the source region and the drain region;
• an N-type semiconductor region formed to surround the source region, the drain region, and the gate electrode;
• a first silicide layer and a second silicide layer formed on the N-type semiconductor region and spaced apart from each other by an isolation layer therebetween;
• a Schottky barrier diode formed by a junction of the first silicide layer and the N-type semiconductor region, wherein the source region is connected to the first silicide layer, and the drain region is connected to the second silicide layer;
• a source contact connected to the source region;
• a drain contact connected to the drain region;
• an anode contact connected to the first silicide layer;
• a cathode contact connected to the second silicide layer;
• a first metal wiring connecting the anode contact and the source contact;
• and
• a second metal wiring connecting the cathode contact and the drain contact.

A semiconductor device comprising:

• an N-type semiconductor region formed to surround a source region, a drain region, and a gate electrode between the source region and the drain region;
• silicide layers formed on the N-type semiconductor region and spaced apart from each other by an isolation layer;
• a Schottky barrier diode formed at an interface of one of the silicide layers and the N-type semiconductor region;
• and
• an isolation region, comprising the N-type semiconductor region, the silicide layers, an anode contact connected to the one of the silicide layers, and a cathode contact connected to the other of the silicide layers,
• wherein the source region is connected to the one of the silicide layers, and
• the drain region is connected to another of the silicide layers.