Silicon carbide semiconductor device and power conversion device

A silicon carbide semiconductor device, comprising:

• a dummy sense region formed between an active region and an active sense region;
• a silicon carbide semiconductor substrate of a first conductivity type;
• a drift layer of a first conductivity type formed on the semiconductor substrate;
• a plurality of first well regions of a second conductivity type provided on the drift layer of the active region;
• a plurality of first separation regions of a first conductivity type each formed adjacent to each of the first well regions;
• a first ohmic electrode provided on the first well regions;
• a source region of a first conductivity type formed on surface layer parts of the first well regions;
• a source electrode provided to have contact with the first separation regions in Schottky connection, and electrically connected to the first ohmic electrode;
• a second well region of a second conductivity type provided on a surface layer of the drift layer of the active sense region separately from the first well regions;
• a plurality of third separation regions of a first conductivity type formed adjacent to the second well region;
• a second ohmic electrode provided on the second well region;
• a sense pad provided to have contact with the third separation regions in Schottky connection, electrically connected to the second ohmic electrode, and formed in the active sense region and the dummy sense region;
• a sense source region of a first conductivity type formed on a surface layer part of the second well region;
• a gate insulating film formed to have contact with the first well regions and the second well region;
• a gate electrode formed to face the first well regions and the second well region via the gate insulating film;
• a gate pad electrically connected to the gate electrode, and
• a third well region of a second conductivity type which is formed on a surface layer of the drift layer in the dummy sense region between the first well regions and the second well region, is separated from the first well regions and the second well region, and is not ohmic-connected to any of the source electrode and the sense pad.