LDMOS transistor

A device structure, comprising:

• a substrate having a semiconductor region;
• an LDMOS transistor structure in the semiconductor region having a substantially-continuous doped region for pefformina a transistor based function, the substantially-continuous doped region having a first doped region more heavily doped and shallower than the substantially-continuous doped region and of the same conductivity type as the substantially-continuous doped region;
• and
• a Schottky diode substantially surrounded by the substantially-continuous doped region;
• wherein the semiconductor region has a background doping of a first conductivity type and wherein the Schottky diode comprises:
• a silicide region on the surface of the substrate;
• and
• a second doped region that is in the semiconductor region, in contact with the silicide region, of the first conductivity type, and of a higher concentration than the semiconductor region.

A device structure comprising a transistor and a Schottky diode further characterized as having:

• a substrate having a semiconductor region;
• a gate structure of the transistor overlying the semiconductor region;
• a first doped region at the surface of the semiconductor region of a first conductivity type formed in and at the surface of the semiconductor region, wherein a portion of the first doped region is under a portion of the gate structure and the first doped region includes a drain contact for the transistor;
• a first Schottky terminal comprising a Schottky region in and at the surface of the semiconductor region that is adjacent with the first doped region;
• and
• a second Schottky terminal comprising a metal on the Schottky region.