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US 12,603,585 B2Granted
Rectifier
AssigneeRohm Co., Ltd.
InventorsSatoki Taniguchi, Kentaro Nasu
Life of this patent
Estimating the term…
Abstract
A rectifier includes a first transistor of a drain/source common field effect type and a second transistor of a drain/source common field effect type in which the second transistor is diode-connected to the first transistor so as to allow the first transistor to perform a diode operation, and configures a rectifier stage with the first transistor.
Claims15
A rectifier comprising:
- a first transistor of a drain/source common field effect type;
- and
- a second transistor of a drain/source common field effect type, the second transistor being diode-connected to the first transistor so as to allow the first transistor to perform a diode operation and configuring a rectifier stage with the first transistor, wherein
- the first transistor is a p-channel type and the second transistor is an n-channel type.
1 more element
A rectifier comprising:
- a transistor of a drain/source common field effect type of a p-channel, the transistor having a gate fixed at a zero potential, a first drain source that functions as an anode of a rectifier stage, a second drain source that functions as a cathode of the rectifier stage, and a back gate electrically connected to the first drain source.
A rectifier comprising:
- a transistor of a drain/source common field effect type of an n-channel, the transistor having a gate, a first drain source wherein the gate is electrically connected to the first drain source, and wherein the first drain source functions as an anode of a rectifier stage, a second drain source that functions as a cathode of the rectifier stage, and a back gate fixed at a zero potential.
Dependencies are inferred from the claim text.