H10D 84/158
The built-in components being breakdown diodes
Official title: {the built-in components being breakdown diodes, e.g. Zener diodes}
H10D84/158 (The built-in components being breakdown diodes) appears on 70 US grants and 73 published applications in this corpus.
Search patents in H10D- Granted patents
- 70
- Published applications
- 73
- Assignees
- 51
- Inventors
- 107
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 2 |
| 2003 | 2 | 1 |
| 2004 | 2 | 1 |
| 2005 | 2 | 2 |
| 2006 | 0 | 3 |
| 2007 | 2 | 2 |
| 2008 | 2 | 2 |
| 2009 | 1 | 2 |
| 2010 | 3 | 7 |
| 2011 | 6 | 5 |
| 2012 | 7 | 8 |
| 2013 | 7 | 2 |
| 2014 | 2 | 5 |
| 2015 | 2 | 2 |
| 2016 | 5 | 2 |
| 2017 | 2 | 3 |
| 2018 | 2 | 5 |
| 2019 | 6 | 3 |
| 2020 | 3 | 5 |
| 2021 | 1 | 1 |
| 2022 | 5 | 4 |
| 2023 | 3 | 2 |
| 2024 | 0 | 1 |
| 2025 | 1 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Multi-level gate driver applied to SiC MOSFET14 Jan 2025US 12,199,150 B2University of Electronic Science and Technology of China
- Power device integration on a common substrate17 Oct 2023US 11,791,377 B2Silanna Asia Pte Ltd
- Protection against electrostatic discharges and filtering30 May 2023US 11,664,367 B2STMicroelectronics (Tours) SAS
- Trench MOSFETs integrated with clamped diodes having trench field plate termination to avoid breakdown voltage degradation7 Mar 2023US 11,600,725 B2Nami MOS CO., LTD.
- Circuit including self-protected transistor2 Apr 2026US 2026/0096228 A1Globalfoundries Singapore Pte. Ltd.
- Integrated circuit device with zener diode with reduced leakage and/or increased breakdown voltage3 Jul 2025US 2025/0221053 A1
- Semiconductor device22 Aug 2024US 2024/0282851 A1Rohm Co., Ltd.
- Power device integration on a common substrate28 Dec 2023US 2023/0420497 A1Silanna Asia Pte Ltd
- Multi-level gate driver applied to sic mosfet12 Oct 2023US 2023/0326973 A1University of Electronic Science and Technology of China
Most cited
By later US patents
- GaN-based compound semiconductor device37US 6,580,101 B2Furukawa Electric Co., Ltd. · 2003
- Power device integration on a common substrate34US 8,674,440 B2Io Semiconductor, Inc. · 2014
- Semiconductor device including a field effect transistor having a protective diode between source and drain thereof24US 4,990,976 ANEC Corporation · 1991
- Power device integration on a common substrate21US 8,994,115 B2Silanna Semiconductor U.S.A., Inc. · 2015
- Insulated gate type semiconductor device and method for fabricating the same20US 7,361,557 B2Hitachi Tobu Semiconductor, Ltd. · 2008