US 11,664,367 B2Granted

Protection against electrostatic discharges and filtering

AssigneeSTMicroelectronics (Tours) SAS

InventorPatrick Poveda

Life of this patent

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Abstract

A protection device includes a first inductive element connecting first and second terminals and a second inductive element connecting third and fourth terminals. A first component includes a first avalanche diode connected in parallel with a first diode string, anodes of the first avalanche diode and a last diode in the string being connected to ground, cathodes of the first avalanche diode and a first diode in the string being connected, and a tap of the first diode string being connected to the first terminal. A second protection component includes a second avalanche diode connected in parallel with a second diode string, anodes of the second avalanche diode and a last diode in the string being connected to ground, cathodes of the second avalanche diode and a first diode in the string being connected, and a tap of the second diode string being connected to the third terminal.

Claims18

Dependent claims

A protection device, comprising:

a first inductive element connecting a first terminal to a second terminal;
a second inductive element connecting a third terminal to a fourth terminal;
a first component for protection against electrostatic discharge, comprising:
a first avalanche diode connected in parallel with a first diode string, with anodes of the first avalanche diode and a last diode in the first diode string being connected to a reference voltage node, with cathodes of the first avalanche diode and a first diode in the first diode string being connected to one another, and with a tap of the first diode string being connected to the first terminal;
and
a second component for protection against electrostatic discharge, comprising:
a second avalanche diode connected in parallel with a second diode string, with anodes of the second avalanche diode and a last diode in the second diode string being connected to the reference voltage node, with cathodes of the second avalanche diode and a first diode in the second diode string being connected to one another, and with a tap of the second diode string being connected to the third terminal.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/717,501Filed 11 Apr 2022 · continuation
Priority: FR 185259326 Mar 2018
Published: US 2022/0238507 A128 Jul 2022
Granted: 30 May 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification20 codes

H10D 89/60
Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00: integrated devices comprising arrangements for electrical or thermal…
H02H 9/046
Adapted to a particular application and not provided for elsewhere: responsive to excess voltage appearing at terminals of integrated circuits
H03H 11/04
Multiple-port networks: frequency selective two-port networks
H10D 8/024
Of breakdown diodes: of Avalanche diodes

Family

Application16/359,431Parent of this continuation · filed 20 Mar 2019
US 2022/0238507 A1Pre-grant publication · published 28 Jul 2022
US 11,329,040 B2Parent of this continuation
US 2019/0296005 A1Published application
US 11,664,367 B2This patent

From the US filing history. Foreign family members aren’t listed.